Wafer scale micrometer-nanometer scale semiconductor LED display screen and preparation method thereof

A LED display screen and semiconductor technology, applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electric solid-state devices, etc., can solve the problems that the manufacturing process is difficult to extend, and the chip pixel size is difficult to further reduce, so as to achieve the convenience of the manufacturing process Effect

Active Publication Date: 2017-07-07
上海摩雍信息科技有限公司
View PDF14 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the size and precision of transfer and packaging of traditional Micro-LEDs, it is difficult to extend

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer scale micrometer-nanometer scale semiconductor LED display screen and preparation method thereof
  • Wafer scale micrometer-nanometer scale semiconductor LED display screen and preparation method thereof
  • Wafer scale micrometer-nanometer scale semiconductor LED display screen and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] The following embodiments will further illustrate the present invention in conjunction with the accompanying drawings.

[0043] The embodiment of the wafer-level micro-nano-scale semiconductor LED display screen includes a first substrate, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a transparent isolation layer and a transparent conductive layer, and the second semiconductor 3x groups of different surfaces are made respectively, and the 3x groups of different surfaces are the first group of surfaces with the angle α with the c-plane, the second group of surfaces with the angle β with the r-plane and the surface with the angle γ with the m-plane The third group of surfaces, the c-plane angle α, the r-plane angle β and the m-plane angle γ are: 0°x Ga 1-x N / GaN material; the first multi-quantum well active layer can obtain the red light R band with a wavelength of 580-680nm by controlling the crystal plane angle α, and the secon...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Wavelengthaaaaaaaaaa
Wavelengthaaaaaaaaaa
Sizeaaaaaaaaaa
Login to view more

Abstract

The invention provides a wafer scale micrometer-nanometer scale semiconductor LED display screen and a preparation method thereof, and relates to semiconductor photoelectric devices. 3x sets of micrometer-nanometer sized elements are etched on a first semiconductor layer of a first conduction type, included angles exist between surfaces of each element and a c surface, a r surface and an m surface, and the three sets of surface included angles are controlled to control emission wavelengths of three sets of active layer In<x>Ga<1-x>N/GaN multiple quantum wells to be arbitrary wavelengths of red green blue RGB wave bands. Red green blue RGB modules of RGB arbitrary permutation combination and arbitrary wave band combination can be made on the same wafer, contact electrodes are made through the first semiconductor and connected with an integrated circuit control panel, on-off and power of the RGB elements can be independently controlled, and the wafer scale high-definition semiconductor LED display screen having a micrometer-nanometer pixel resolution is made.

Description

technical field [0001] The invention relates to a semiconductor optoelectronic device, in particular to a wafer-level micron-nano semiconductor LED display screen and a preparation method thereof. Background technique [0002] Nowadays, light-emitting diodes (LEDs), especially nitride light-emitting diodes, have been widely used in the field of general lighting due to their high luminous efficiency. LED indoor and outdoor display technology has been widely used in stage, advertising, sports facilities and other aspects. At present, the packaging size of LEDs is at the millimeter level, and the large pixel size results in poor resolution and poor image quality. The future development direction of LED display technology is to realize ultra-small size LEDs to obtain smaller luminous pixel sizes, thereby obtaining higher resolution and image quality. Micro-light-emitting diode displays (Micro-LED) or nano-scale light-emitting diode displays (Nano-LED) based on nitride and arse...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G09F9/33H01L27/12H01L21/77
CPCG09F9/33H01L21/77H01L27/12
Inventor 郑锦坚郑清团王星河康俊勇
Owner 上海摩雍信息科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap