Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

in 3+ , nb 5+ Composite donor doped zno varistor ceramic and preparation method

A technology of varistor ceramics and donor doping, which is applied in varistors, varistor cores, etc., can solve the problem of ZnO varistor aging life, the decline of pulse current tolerance performance indicators, and the inability to meet industrial applications. The problem of large radius difference can achieve the effect of enhancing aging life, suppressing the decline of nonlinear coefficient, and suppressing the increase of leakage current

Active Publication Date: 2020-11-10
贵阳高新益舸电子有限公司
View PDF18 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the ion radius of Al is only 0.0535nm, and the ion radius of Zn is 0.074nm, the difference between the ion radii of the two is relatively large, and the formation of donor doping will lead to serious distortion of the ZnO lattice, which will inevitably lead to the aging life of ZnO varistors, pulse Performance indicators such as current tolerance have dropped significantly, which can no longer meet the needs of industrial applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • in <sup>3+</sup> , nb <sup>5+</sup> Composite donor doped zno varistor ceramic and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1: a kind of In 3+ , Nb 5+ The ZnO varistor ceramic prepared by compound donor doping includes a base material and a dopant, and the base material includes ZnO: 90.5 parts, Bi 2 o 3 : 3.0 parts, MnO 2 : 0.5 parts, Sb 2 o 3 : 2.5 parts, Co 2 o 3 : 1 part, Cr 2 o 3 : 0.5 parts, 2 parts of seed crystal dopant material, the mass fraction ratio of said seed crystal dopant material is ZnO: Nb(NO 3 ) 5 :In(NO 3 ) 3 =94:4:2.

Embodiment 2

[0027] Embodiment 2: a kind of In 3+ , Nb 5+ The ZnO varistor ceramic prepared by compound donor doping includes a base material and a dopant, and the base material includes ZnO: 87 parts, Bi 2 o 3 : 2.0 parts, MnO 2 : 0.4 parts, Sb 2 o 3 : 1.5 parts, Co 2 o 3 : 0.5 parts, Cr 2 o 3 : 0.2 part, seed dopant: 1 part; the seed dopant is ZnO, Nb 2 o 5 and In 2 o 3 , whose mass fraction ratio is ZnO:Nb 2 o 5 :In 2 o 3 =90:0.1:0.1.

Embodiment 3

[0028] Embodiment 3: a kind of In 3+ , Nb 5+ The ZnO varistor ceramic prepared by compound donor doping includes a base material and a dopant material, and the base material includes ZnO: 95 parts, Bi 2 o 3 : 4.0 parts, MnO 2 : 0.7 parts, Sb 2 o 3 : 3.5 parts, Co 2 o 3 : 1.5 parts, Cr 2 o 3 : 1.0 parts, seed dopant: 5 parts; the seed dopant is ZnO, Nb 2 o 5 and In 2 o 3 , whose mass fraction ratio is ZnO:Nb 2 o 5 : In 2 o 3 =95:5:5.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
radiusaaaaaaaaaa
radiusaaaaaaaaaa
radiusaaaaaaaaaa
Login to View More

Abstract

The invention discloses In<3+> and Nb<5+> composite donor-doped ZnO voltage-sensitive ceramic and a preparation method thereof. The voltage-sensitive ceramic comprises base materials and doping materials. The base materials contain, by weight, 87-95 parts of ZnO, 2.0-4.0 parts of Bi2O3, 0.4-0.7 part of MnO, 1.5-3.5 parts of Sb2O3, 0.5-1.5 parts of Co2O3, 0.2-1.0 part of Cr2O3, and 1-5 parts of seed crystal doped materials. The seed crystal doped materials include ZnO, Nb2O5 and In2O3, wherein mass ratio of ZnO: Nb2O5: In2O3 is 90-95: 0.1-5: 0.1-5. The In<3+> and Nb<5+> composite donor-doped ZnO voltage-sensitive ceramic has characteristics of reducing ZnO grain resistivity and controlling ZnO lattice distortion to finally achieve low residual voltage of ZnO varistor, long aging life and strong pulse current withstand capacity.

Description

technical field [0001] The invention relates to a ZnO varistor ceramic and a preparation method thereof, in particular to an Al-free 3+ Doped In 3+ , Nb 5+ Composite donor-doped ZnO varistor ceramics and a preparation method thereof. Background technique [0002] ZnO varistor is made of ZnO as the main raw material, adding a small amount of Bi 2 o 3 、Co 3 o 4 , MnO 2 , Sb 2 o 3 、Cr 2 o 3 And other raw materials, prepared by ceramic sintering process. The varistor has the advantages of good nonlinearity and large flow capacity, and it has been widely used as a lightning surge protection component in electronic circuits and power systems. With the rapid development of microelectronic information technology, the requirements for miniaturization, integration and modularization of components are becoming more and more urgent. Miniaturized electronic components have high sensitivity and low overvoltage resistance level, which increases the demand for lightning protect...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/63H01C7/112
CPCC04B35/453C04B35/6303C04B2235/3241C04B2235/3251C04B2235/3267C04B2235/3275C04B2235/3286C04B2235/3294C04B2235/3298C04B2235/602C04B2235/656C04B2235/6567H01C7/112
Inventor 庞驰方超张宁周芳
Owner 贵阳高新益舸电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com