A half-bridge power semiconductor module

Abstract

The invention discloses a half-bridge power semiconductor module, comprising: a semiconductor chipset located at the bottom layer; a low-sensitivity composite busbar located at the top layer, and the two sides of the low-sensitivity composite busbar are respectively extended with AC interfaces and positive and negative layer interfaces, The low-sensitivity composite busbar includes the negative layer busbar, the positive layer busbar and the AC layer busbar arranged in layers; several busbar groups connected in parallel with each other in the middle layer, among which, the bottom end of each busbar group and the semiconductor chip The corresponding semiconductor chips in the group are connected, and the top busbars of each busbar group are connected to the corresponding busbars of the low-inductance composite busbars. The semiconductor chipset is the main functional part of the power module. The AC interface and the positive and negative layer interfaces of the low-inductance composite busbar are used as the external interface of the main circuit of the power module. The busbar group realizes the conductive connection between the low-inductance composite busbar and the semiconductor chipset. , taking into account the current sharing between the busbar group and the chips of the semiconductor chipset, and improving the low inductance and current sharing of the power module.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a half-bridge power semiconductor module. Background technique [0002] With the development of science and technology, power electronics technology has made many achievements. Among them, the power module is a commonly used component in power electronics. [0003] The power module is the core component of the converter, which is widely used in rail transit and industrial frequency conversion and other fields. At present, power modules with a half-bridge circuit inside are mainly concentrated in the low-voltage, medium-to-low power segment, and single-tube layout solutions are mainly used for high-voltage and high-power semiconductor modules. The current power modules still have many shortcomings, especially in high-voltage and high-power applications. The main manifestations are as follows: due to the single-tube design, the power density is not high; the connection ...

AI Technical Summary

Problems solved by technology

The current power modules still have many shortcomings, especially in high-voltage and high-power applications. The main manifestations are as follows: due to the single-tube design, the power density is not high; the connection between the internal chip and the external power terminal mainly uses traditional copper bars. Its low inductance is poor; multi-chip current sharing is poor, or the inductance current sharing method with low-inductance busbars arranged outside the module is difficult to control.

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