SiC power device driving circuit capable of suppressing bridge arm crosstalk and control method thereof

A driving circuit and power device technology, which is applied in the field of power electronics, can solve problems such as the small optional range of driving negative voltage, the inability to adjust the turn-off gate resistance, and the inability to adjust the turn-off speed of power devices, so as to achieve short drive circuits and lighten effect, the effect of small gate parasitic inductance

Pending Publication Date: 2019-11-22
ELECTRIC POWER RES INST OF STATE GRID ZHEJIANG ELECTRIC POWER COMAPNY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] An existing SiC power device drive circuit, such as figure 1 As shown, due to the small positive threshold voltage and negative safety voltage of the SiC power device, the opt

Method used

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  • SiC power device driving circuit capable of suppressing bridge arm crosstalk and control method thereof
  • SiC power device driving circuit capable of suppressing bridge arm crosstalk and control method thereof
  • SiC power device driving circuit capable of suppressing bridge arm crosstalk and control method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0042] Example 1

[0043] This embodiment provides a SiC power device driving circuit capable of suppressing bridge arm crosstalk, such as figure 2 As shown, the bridge arm includes an upper tube Q 1 And down tube Q 2 , The upper tube Q 1 Connect Q 1 Drive circuit, down tube Q 2 Connect Q 2 Drive circuit. The upper tube Q in the picture 1 The equivalent circuit includes the upper tube Q 1 Equivalent gate resistance R G1H , Gate-drain junction capacitance C GDH , Gate-source junction capacitance C GSH , Drain-source junction capacitance C DSH And body diode D 1 . Down tube Q 2 The equivalent circuit includes the down tube Q 2 Equivalent gate resistance R G1L , Gate-drain junction capacitance C GDL , Gate-source junction capacitance C GSL , Drain-source junction capacitance C DSL And body diode D 2 .

[0044] The Q 1 The driving circuit includes an upper tube G-pole driving circuit, an upper tube S-pole driving circuit, and an upper capacitor C arranged between the upper tu...

Example Embodiment

[0052] Example 2

[0053] This embodiment provides a method for controlling a SiC power device drive circuit, which divides one cycle of the SiC power device drive circuit of Embodiment 1 into t 0 ~t 1 , T 1 ~t 2 , T 2 ~t 3 , T 3 ~t 4 Four stages, down tube Q 2 For active management, upper management Q 1 The control logic for passive control is as follows, the specific control logic is as follows image 3 Shown.

[0054] t 0 ~t 1 The first stage: the second down tube G pole switch tube S 2_L And the second down tube S pole switch tube S a2_L On, down tube Q 2 The gate-source voltage is 0V, at this time in the off state; the second upper tube G pole switch tube S 2_H And the first upper tube S pole switch tube S a1_H On, upper tube Q 1 The gate-source voltage is -U ss_H , In order to prevent Q in the second stage 2 Q at the moment of opening 1 Prepare for the forward voltage spike of the gate source to exceed the threshold voltage;

[0055] t 1 ~t 2 The second stage: the first down ...

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Abstract

The invention discloses a SiC power device driving circuit capable of suppressing bridge arm crosstalk and a control method thereof. The driving circuit comprises a G-pole driving circuit, an S-pole driving circuit and a capacitor arranged between the G-pole driving circuit and the S-pole driving circuit. The G-pole drive circuit comprises a positive voltage power supply, a first G-pole switch tube, a second G-pole switch tube, a switch-on resistor and a switch-off resistor, wherein the first G-pole switch tube, the second G-pole switch tube, the switch-on resistor, the switch-off resistor andthe second G-pole switch tube are used for controlling the G-pole voltage state and are sequentially connected in series. The S-pole drive circuit comprises a negative voltage power supply, a first S-pole switch tube and a second S-pole switch tube, wherein the first S-pole switch tube and the second S-pole switch tube control the S-pole voltage state. The negative-voltage power supply, the firstS-pole switch tube and the second S-pole switch tube are sequentially connected in series. According to the invention, the influence of the gate-source parallel capacitor on the switching speed is reduced, and the problem of bridge arm crosstalk is effectively inhibited.

Description

technical field [0001] The invention belongs to the technical field of power electronics and relates to a SiC power device, in particular to a SiC power device drive circuit capable of suppressing bridge arm crosstalk and a control method thereof. Background technique [0002] SiC power devices have high operating voltage, fast switching speed, and high operating temperature, which are conducive to improving the efficiency and power density of power electronic converters, and have broad application prospects. However, the high switching speed of SiC power devices will inevitably result in high voltage / current change rates, so that the influence of parasitic parameters on the switching characteristics of SiC power devices becomes obvious, and the resulting bridge arm crosstalk problem seriously affects the reliability of SiC power devices. This limits the advantage of high switching speeds for SiC power devices. Therefore, in order to realize the high-speed and reliable appl...

Claims

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Application Information

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IPC IPC(8): H02M1/088
CPCH02M1/088H02M1/0038Y02B70/10
Inventor 陈骞王异凡陆翌裘鹏柯人观周竞宣佳卓许烽倪晓军丁超王朝亮郑眉
Owner ELECTRIC POWER RES INST OF STATE GRID ZHEJIANG ELECTRIC POWER COMAPNY
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