Double-surface heat-dissipation and high-reliability power module

Abstract

The invention discloses a double-surface heat-dissipation and high-reliability power module. The double-surface heat-dissipation and high-reliability power module comprises a positive power terminal, a negative power terminal, an output power terminal, a bottom metal insulating substrate and a top metal insulating substrate; the bottom metal insulating substrate and the top metal insulating substrate are laminated; an output local metal layer is arranged on the bottom metal insulating substrate or the top metal insulating substrate; the output power terminal is connected to a chip connection block through the output local metal layer; and the chip connection block is electrically connected with a chip on the bottom metal insulating substrate and a chip on the top metal insulating substrate. By means of the double-surface heat-dissipation and high-reliability power module disclosed by the invention, the loop parasitic inductance is greatly reduced; interconnection is realized by adoption of a material matched with the thermal expansion coefficient of the chip; the cracking risk of a welding layer can be reduced; the reliability of the power module can be improved; the volume of the power module is reduced; the cost is reduced; the weight is lightened; the module is particularly suitable for encapsulation of a SiC power chip; and thus, the discharge capacity is sufficiently improved.

Description

technical field [0001] The invention relates to a power electronic power module, in particular to a high-reliability power module with double-sided heat dissipation. Background technique [0002] Power electronics technology occupies a very important position in today's fast-growing industrial field. As a representative of power electronics technology, power electronics power modules have been widely used in electric vehicles, photovoltaic power generation, wind power generation, industrial frequency conversion and other industries. With the rise of my country's industry, power electronics power modules have a broader market prospect. [0003] Existing power electronic power modules have large packaging volume and heavy weight, which do not meet the requirements of high power density and light weight in the fields of electric vehicles, aerospace and other fields. Larger power electronic power modules often have larger parasitic inductance, which will result in larger oversh...

AI Technical Summary

Problems solved by technology

The parasitic inductance of larger power electronic power modules is often relatively large, which will cause large overshoot voltage and increase loss, and also limit the application in high switching frequency occasions

SiC power electronic devices have the characteristics of high frequency, high temperature, and high efficiency, but the parasitic inductance of existing power modules is large, which limits the performance of SiC

In addition, with the continuous upgrading of power density at the application end, the packaging structure of existing power modules has hindered the further improvement of power density, and a more effective heat dissipation structure must be developed to meet the increasing demand for power density

[0004] Existing double-sided heat dissipation power modules such as CN105161477A, ​​due to the single-layer arrangement of the chip, the area of ​​the current commutation circuit is still relatively large, and the parasitic inductance is often relatively large, and the single-layer arrangement of the chip makes the volume of the power module relatively large. The power terminals and control terminals are only connected to the first backing board, the setting is not flexible enough, the backing board area cannot be further reduced, and the loss increases due to the long current path

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