Unlock instant, AI-driven research and patent intelligence for your innovation.

IGBT

By arranging the surface body area and the separated body area at the rectangular trench connection part of the IGBT, the channel is formed only in a specific area, which solves the problem of increasing the saturation current, improves the short-circuit resistance performance, and maintains the dimensional stability of the rectangular area.

Active Publication Date: 2017-07-21
DENSO CORP
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the IGBT turn-on voltage is lower

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Figure 1~4 The IGBT 10 according to the embodiment is shown. Such as Figure 2~4 As shown, the IGBT 10 has a semiconductor substrate 20, an emitter 50 and a collector 60. The emitter 50 is arranged on the upper surface 20 a of the semiconductor substrate 20. The collector 60 is arranged on the lower surface 20 b of the semiconductor substrate 20. In addition, in figure 1 Here, illustration of the structure above the upper surface 20 a of the semiconductor substrate 20 such as the emitter electrode 50 is omitted. In addition, in the following description, a direction parallel to the upper surface 20a is referred to as the x direction, a direction parallel to the upper surface 20a and orthogonal to the x direction is referred to as the y direction, and the thickness direction of the semiconductor substrate 20 (ie , The direction orthogonal to the x direction and the y direction) is called the z direction.

[0024] A plurality of grooves 91 and a plurality of grooves 92 a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An IGBT includes a rectangular trench including first to fourth trenches and a gate electrode arranged inside of the rectangular trench. An n-type emitter region includes a first emitter region being in contact with the first trench, and a second emitter region being in contact with the third trench. A body contact region includes a first body contact region being in contact with the second trench, and a second body contact region being in contact with the fourth trench. A surface body region is in contact with the trenches in ranges from connection portions to the emitter regions.

Description

Technical field [0001] The technology disclosed in this specification relates to an insulated gate bipolar transistor (IGBT). Background technique [0002] Patent Document 1 discloses an IGBT having a rectangular trench. A gate electrode is arranged in the rectangular trench. In a rectangular area (semiconductor area) surrounded by a rectangular trench, an emitter area (n-type area), a body contact area (p + Type area), low concentration body area (p - Type area) and so on. The emitter region and the emitter are in contact with the rectangular trench (ie, the gate insulating film). The body contact area is connected to the emitter. A part of the low-concentration body region is arranged on the surface layer of the semiconductor substrate, and is in contact with the emitter and the rectangular trench here. In addition, another part of the low-concentration body region is arranged on the lower side of the emitter region and the body contact region, and is connected to the recta...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/739
CPCH10D62/125H10D12/411H10D62/127H10D62/393H10D64/519H10D12/481
Owner DENSO CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com