Method of forming a fin field effect transistor

Abstract

A forming method of a fin type field effect transistor comprises the steps of supplying a substrate which comprises a first area with first fin parts; forming a first gate structure which bestrides the first fin parts; forming a first source electrode material layer and a first drain electrode material layer on the first fins at two sides of the first gate structure; forming a first dielectric layer on the substrate, the first gate structure, the first source electrode material layer and the first drain electrode material layer; forming a first source electrode through hole and a first drain electrode through hole in the first dielectric layer; forming a first metal layer on the source electrode material layer and the first drain electrode material layer; performing first annealing processing on the first metal layer for forming a first high-impedance-phase metal silicide layer; performing ion implantation on the first high-impedance-phase metal silicide layer; and performing second annealing processing on the first high-impedance-phase metal silicide layer after ion implantation, thereby forming a first source electrode metal silicide layer and a first drain electrode metal silicide layer. The forming method can improve performance of a subsequently formed transistor.

Description

technical field [0001] The present invention relates to semiconductor manufacturing, and in particular to a method for forming a Fin Field Effect Transistor. Background technique [0002] With the development of the semiconductor industry to lower technology nodes, the transition from planar CMOS transistors to three-dimensional Fin Field Effect Transistors (FinFETs) has gradually begun. In FinFET, the gate structure can control the channel from at least two sides, which has a much stronger control ability of the gate structure to the channel than planar MOSFET devices, and can well suppress the short channel effect. And compared with other devices, it has better compatibility with the existing integrated circuit production technology. [0003] The formation method of the N-type fin field effect transistor in the prior art is as follows: [0004] First, a semiconductor substrate is provided, the semiconductor substrate having fins. Next, a gate structure across the fin is...

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Problems solved by technology

[0006] The problem solved by the present invention is that the performance of the N-type fin field effect transistor formed by the method of the prior art is not good

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