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An application method for accurately obtaining llr information

An application method and precise technology, applied in the field of information storage, can solve the problems of low precision of LLR and affect the effect of LDPC decoding, etc., and achieve the effect of realizing data recovery, reducing bit error rate and ensuring efficiency

Active Publication Date: 2020-04-28
RAMAXEL TECH SHENZHEN
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  • Claims
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AI Technical Summary

Problems solved by technology

At present, the decoding is performed according to the LLR provided by the Nand Flash manufacturer, or it is constantly trying to use different LLRs for decoding. There is no effective solution to obtain LLR, and the accuracy of the obtained LLR is not high, which also affects the performance of LDPC. decoding effect

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  • An application method for accurately obtaining llr information
  • An application method for accurately obtaining llr information
  • An application method for accurately obtaining llr information

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Embodiment Construction

[0013] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0014] figure 1 It is the flow chart of the statistical stage and the data recovery stage; it mainly includes two parts, the statistical stage and the data recovery stage. The purpose of the statistical stage is to obtain the voltage and decoding LLR information that are generally applicable to the reading of the same batch of NAND FALSH.

[0015] In the statistical stage, for the same batch of NAND, since the process physical conditions are the same, the randomly ...

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Abstract

The invention discloses an application method for accurately obtaining LLR information. The method is characterized by comprising the steps of selecting statistics samples; calculating Optimal Vref of each sample; by setting multi-level multi-bit reading voltages, calculating the LLR information corresponding to the multi-level reading voltages, and performing multi-bit LDPC decoding; and by comparing iterative frequencies and decoding results of the multi-bit LDPC decoding corresponding to different reading voltages, recording the reading voltage with the lowest iterative frequency and the decoding correctness as a multi-bit optimal reading voltage, wherein the corresponding LLR information is initial LLR information of a batch of products, and the batch of the products finitely adopt the optimal reading voltage to read data by default and adopt the initial LLR information to decode the data. An empirical value is obtained by adding statistics and serves as a parameter during normal decoding to ensure normal NAND reading-writing efficiency; and when the normal decoding fails and data recovery needs to be carried out, the scheme can estimate more accurate multi-bit LLR information, thereby reducing the error code rate and realizing the data recovery.

Description

technical field [0001] The invention relates to the field of information storage, in particular to an application method for accurately obtaining LLR information of NAND FLASH. Background technique [0002] The current NAND FLASH controller NFC (Nand Flash Controller) has begun to use the low-density parity check code LDPC (Low-density Parity-check) code as the error correction code. Compared with BCH codes (abbreviations of Bose, Ray-Chaudhuri and Hocquenghem, BCH codes are multi-level, cyclic, error-correcting, variable-length digital codes for correcting multiple random error patterns), LDPC codes are superior in error correction capabilities. Bigger advantage, especially multi-bit LDPC. The accuracy of obtaining log likelihood ratio LLR (Log Likelihood Ratios) information from Nand FLASH directly affects the effect of LDPC decoding. At present, the decoding is performed according to the LLR provided by the Nand Flash manufacturer, or it is constantly trying to use diff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/08H03M13/11
CPCG11C16/08H03M13/1125
Inventor 郭超伦建坤
Owner RAMAXEL TECH SHENZHEN
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