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Photoelectric conversion element and method for manufacturing photoelectric conversion element

A technology for photoelectric conversion elements and manufacturing methods, which is applied to electrical elements, photovoltaic power generation, electrolytic capacitors, etc., can solve the problems of difficulty in forming semiconductor porous films, increased distance between electrodes, and decreased power generation efficiency, and achieve ease of manufacture and Effects of improving collection efficiency and power generation efficiency

Inactive Publication Date: 2017-08-01
SEKISUI CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] That is, the conventional dye-sensitized solar cell having a mesh-shaped metal layer has a semiconductor porous film formed on the protective layer, so the distance (gap) between the electrodes of the transparent conductive film and the photoconductive film becomes large, and the power generation efficiency falling problem
[0013] In addition, when the semiconductor porous film on the protective layer is irradiated with light, the electrons generated in the semiconductor porous film cannot be taken out on the metal layer or the transparent conductive film, and become a reverse electron reaction to the electrolytic solution. Therefore, There is a problem that power generation efficiency decreases
[0014] In addition, in the case of forming a mesh-shaped metal layer with fine pores to improve the current collection efficiency, it is extremely difficult to form a semiconductor porous film only on the electrode while avoiding the metal layer.

Method used

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  • Photoelectric conversion element and method for manufacturing photoelectric conversion element
  • Photoelectric conversion element and method for manufacturing photoelectric conversion element
  • Photoelectric conversion element and method for manufacturing photoelectric conversion element

Examples

Experimental program
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Embodiment 1

[0109] Hereinafter, although an Example demonstrates this invention in detail, this invention is not limited by the following description.

[0110] (Formation of the first electrode 7)

[0111] As the first substrate 2 on which the transparent conductive film 3 was formed, a PEN thin film having a surface resistance of 15Ω / □ in which ITO was formed on the surface of the first substrate 2 was prepared.

[0112] As the conduction material 5 , a mesh pattern of silver electrodes (film thickness 5 μm, line width 100 μm) was formed on an ITO film by the screen printing method, and baked at 120° C. for 10 minutes. At this time, the opening size (mesh 1 mas size) of each mesh was set to 1100 μm×1100 μm.

[0113] (Formation of protective film 4)

[0114] On the first electrode 7, a screen printing method was used to form a mesh pattern of the protective film 4 (film thickness 10 μm, line width 20 μm) using an acrylic UV curable resin, and irradiated at 3000 mJ / cm 2 UV. At this tim...

Embodiment 2

[0125] In the formation of the first electrode 7, in addition to changing the line width of the silver electrode to 1000 μm, changing the opening size of each mesh to 6000 μm×6000 μm and changing the line width of the protective film 4 to 3000 μm in the formation of the protective film 4, Except changing the opening size of each mesh to 4000 micrometers x 4000 micrometers, it produced and evaluated similarly to the said Example 1.

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Abstract

A photoelectric conversion element provided with: a first electrode having a first substrate, an electroconductive film formed on the first substrate, a conductive material arranged on the surface of the electroconductive film so that conduction with the electroconductive film is possible, the surface of the conductive material being coated by a protective film, and a semiconductor porous film formed on the electroconductive film; and a second electrode having a second substrate and a counter electroconductive film formed on the second substrate. The first electrode and the second electrode are arranged such that the electroconductive film and the counter electroconductive film face each other.

Description

technical field [0001] The present invention relates to a photoelectric conversion element and a method for manufacturing the photoelectric conversion element. [0002] This application claims priority based on Japanese Patent Application No. 2015-008497 for which it applied in Japan on January 20, 2015, and uses the content here. Background technique [0003] Photoelectric conversion elements such as silicon-based solar cells and dye-sensitized solar cells are attracting attention as green energy power generation devices. In recent years, in order to use the roofs of large facilities other than factories, vacant spaces, etc., the demand for high-output solar cells has increased, and research on increasing the size of solar cells has been promoted. [0004] As one of the problems of increasing the size of solar cells, since the resistance value of the conductive film constituting the electrodes is high, even if the area of ​​the module is increased to increase the power gen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20
CPCH01G9/20Y02E10/542Y02P70/50H01G9/2022
Inventor 时田大辅功刀俊介
Owner SEKISUI CHEM CO LTD