Wafer electroplating device and method
An electroplating device and wafer technology, which is applied in the direction of circuits, electrolytic components, electrolytic processes, etc., can solve the problems of uneven electric field distribution on the surface of the wafer and affect the uniformity of electroplating, and achieve dynamic uniform distribution, high electroplating efficiency, and uniformity good sex effect
Active Publication Date: 2017-08-11
BEIJING SEMICON EQUIP INST THE 45TH RES INST OF CETC
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[0005] The object of the present invention is to propose a wafer electroplating device, by respectively setting the inner first annular obstacle and the inner second annular obstacle between the wafer and the anode so as to realize changing the inner side between the central area of the wafer surface and the anode The resistance value of the transfer resistor can be used to solve the problem that the uneven distribution of the electric field on the surface of the wafer affects the uniformity of plating
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[0021] see figure 1 and figure 2 , figure 1 It is a schematic diagram of the structure and principle of a wafer electroplating device in the prior art. The electroplating solution 1 is contained in the electroplating container 3, the wafer 2 and the anode 5 are immersed in the electroplating solution 1, and the electroplating power supply 6 is respectively connected to the wafer 2 and the anode as the cathode. 5. In order to improve the utilization rate of the wafer 2, the edge area of the wafer 2 is generally used as the contact point of the cathode current in the prior art, and the schematic diagram of the electrical principle in the whole circuit is as follows figure 2 As shown, since there is resistance in the seed layer as the conductive layer, there is a resistance Ra between the edge region of the wafer 2 and the center region of the wafer 2, and there is a resistance Rb between point A of the edge region of the wafer 2 and the anode 5, There is a resistance Rd b...
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The invention discloses a wafer electroplating device. The wafer electroplating device comprises an electroplating container containing electroplate liquid, a wafer, an anode and an electroplating power source. The wafer and the anode are immersed in the electroplate liquid. The wafer is electrically connected with the anode through the electroplating power source, and an electroplating electric field is formed between the wafer and the anode. A center area of the electroplating electric field is internally provided with an inner side first annular obstacle and an inner side second annular obstacle which are concentric with the wafer. The inner side first annular obstacle and the inner side second annular obstacle are arranged between the wafer and the anode so that the resistance value of an inner side transmission resistor between the center area on the surface of the wafer and the anode in the electroplating process can be changed, a rotation motor is used for driving the wafer to rotate, accordingly, uniform distribution of the wafer electroplating surface electric field is achieved, and the problem about the electroplating coating uniformity due to uneven distribution of the wafer surface electric field is solved. The wafer electroplating device has the beneficial effects of being easy to operate, good in uniformity, high in electroplating efficiency and the like.
Description
technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a wafer electroplating device and an electroplating method. Background technique [0002] In the production process of semiconductor integrated circuits and other semiconductor devices, various metal layers need to be fabricated on the surface of the wafer to achieve electrical interconnection and other functions. Electroplating is one of the key processes for making these metal layers. Wafer electroplating is to place the wafer in the electroplating solution, apply the voltage negative electrode to the pre-fabricated thin metal layer (seed layer) on the wafer, and apply the voltage positive electrode to the On the soluble or insoluble anode, the metal ions in the plating solution are deposited on the surface of the wafer through the action of an electric field. [0003] With the development of semiconductor technology, thinner and thinner seed layers ar...
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IPC IPC(8): C25D7/12C25D17/00
CPCC25D7/12C25D17/001
Inventor 刘永进陈隽张文斌李元升蒲继祖
Owner BEIJING SEMICON EQUIP INST THE 45TH RES INST OF CETC