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Semiconductor Device And Circuit

A technology of semiconductors and devices, applied in the fields of semiconductor devices, semiconductor circuits and instantaneous blocking devices, can solve problems such as power supply short circuit, chip damage or related electronic system failures, etc.

Inactive Publication Date: 2017-08-11
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, a triggered parasitic BJT can cause a short circuit between the power (VDD) line and the ground (VSS) line, which can cause damage to the associated chip or malfunction of the associated electronic system

Method used

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  • Semiconductor Device And Circuit
  • Semiconductor Device And Circuit
  • Semiconductor Device And Circuit

Examples

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Embodiment Construction

[0025] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are in direct contact, and may include additional components formed between the first component and the second component An embodiment such that the first part and the second part are not in direct contact. Additionally, the invention may repeat reference numerals and / or characters in multiple instances. This repetition is for the purposes of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed...

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Abstract

Embodiments of the present invention relate to a semiconductor device. The semiconductor device includes a substrate, a first doped region, a second doped region, a third doped region, a first transient blocking unit and a second transient blocking unit. The first doped region is located in the substrate. The second doped region is located in the first doped region. The third doped region is located in the first doped region. The first transient blocking unit is electrically connected to the second doped region. The second transient blocking unit is electrically connected between the third doped region and the first transient blocking unit. Embodiments of the present invention also relate to a semiconductor circuit and a transient blocking device.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and more particularly, to semiconductor devices, semiconductor circuits, and transient blocking devices. Background technique [0002] In semiconductor devices using complementary metal-oxide-semiconductor (CMOS) technology, parasitic npn and pnp bipolar junction transistors (BJTs) can be formed in source regions, drain regions, n-type wells, p-type wells, and substrates . [0003] Parasitic BJTs can cause problems when firing. For example, a triggered parasitic BJT can cause a short circuit between the power (VDD) line and the ground (VSS) line, which can cause damage to the associated chip or malfunction of the associated electronic system Contents of the invention [0004] An embodiment of the present invention provides a semiconductor device, including: a substrate; a first doped region located in the substrate; a second doped region located in the first doped region; a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/092
CPCH01L27/0274H01L27/0251H01L27/0922
Inventor 赖明芳
Owner TAIWAN SEMICON MFG CO LTD
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