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Semiconductor device, manufacturing method thereof, and controller for vehicle

A technology of structural elements and semiconductors, applied in the field of vehicle control devices, power MOSFET elements, and manufacturing semiconductor structural elements

Active Publication Date: 2017-08-18
ROBERT BOSCH GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem with these methods is that the chip-on-widerstand (Chip-on-widerstand) (R on ) changes over time
Accurate current measurement is no longer possible

Method used

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  • Semiconductor device, manufacturing method thereof, and controller for vehicle
  • Semiconductor device, manufacturing method thereof, and controller for vehicle
  • Semiconductor device, manufacturing method thereof, and controller for vehicle

Examples

Experimental program
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Embodiment Construction

[0033] FIG. 1 shows a power MOSFET (PowerMOSFET) with a trench structure known from the prior art. The power MOSFET is a vertical component, that is to say the source and the drain are arranged vertically one above the other, whereas in conventional lateral components the source and the drain are arranged horizontally apart from each other. Accordingly, in the example shown the current I ds The flow also flows through the semiconductor component 10 in the vertical direction.

[0034] The source connection 12 can be seen in the upper region of the illustration and the drain region 14 can be seen in the lower region of the illustration. Furthermore, two trenches 16 are depicted, in which a gate electrode 18 and a field plate 20 are respectively arranged. Any number of other trenches may also be present, but are not shown in FIG. 1 since only a part of the semiconductor structure element 10 is shown. In this example known from the prior art, the field plate 20 and the source c...

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PUM

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Abstract

To provide a semiconductor device, a method for manufacturing the semiconductor device, and a controller for a vehicle. A semiconductor device 10, especially a power MOSFET having a source contact 12, a drain region 14 and a field plate 20 is provided with a field plate terminal 26 electrically connected to the field plate in order to measure a capacitance between the drain and field plate. The field plate is not electrically connected to the source contact. The determined capacitance Cis converted into a current Iflowing through the semiconductor device, whereby the current is measured. An excitation and measurement circuit 28 determines a current intensity from a system response of a low excitation voltage on the field plate terminal 26. The invention also discloses vehicle control device provided with the semiconductor structural element (10).

Description

technical field [0001] The invention relates to a semiconductor component, preferably a power MOSFET component, a method for producing the semiconductor component, and a control device for a vehicle. Background technique [0002] In power electronics systems, eg for motor control, the phase currents play a decisive role for system regulation. Excessively high currents during the switching process can lead to breakdown of the component and can lead to its destruction. The current is therefore measured in many cases, for example via a shunt. If the phase currents are measured by means of shunts, an additional area on the DBC (Direct Bonded Copper) or on the stamped grid is required for this. In addition, a further component is required together with the splitter, which also leads to an increase in costs. [0003] Therefore, some ideas have been developed: to measure the current directly on the current-carrying semiconductor. It is known, for example, from US 2008 / 0088355 A...

Claims

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Application Information

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IPC IPC(8): H01L29/40H01L29/78G01R19/00
CPCG01R19/0092H01L29/407H01L29/7827H01L23/62H01L29/7813
Inventor W·V·埃姆登
Owner ROBERT BOSCH GMBH