The invention discloses a photoelectrode with growth of InxGa1-xN nanowires on a
tantalum substrate. The photoelectrode comprises the Ta substrate, an intermediate layer and an InxGa1-xN
nanowire layer, wherein the x is equal to 0.05-0.5, the intermediate layer comprises Ta
nitride, is formed between the Ta substrate and the InxGa1-xN
nanowire layer, and is matched with the
energy level of the InxGa1-xN
nanowire layer. A preparation method comprises the steps that a
tantalum sheet is subjected to pretreatment through an
anodic oxidation method in combination with a high-temperature ammoniationmethod to form the intermediate layer, and then a VLS-CVD method is adopted to make the InxGa1-xN nanowires grow on the treated
tantalum sheet. According to the designed photoelectrode with a Ta / (Ta2N / TaN / TaN5) / InxGa1-xN nanowire structure, the intermediate layer matched with the
energy level is constructed, so that efficiency of the
photocatalytic decomposition water
hydrogen production and thephotocatalytic degradation of organic pollutants in water is greatly improved, moreover, the method is simple, and an important application prospect in the aspect of solving the energy and environmentproblems is achieved.