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Workpiece processing method and apparatus

A workpiece and plasma chamber technology, applied in the field of workpiece processing and devices, can solve the problems of ion density reduction, ribbon ion beam non-uniformity, etc.

Active Publication Date: 2017-08-18
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in these embodiments, the ribbon ion beam extracted from the plasma chamber may not have the desired uniformity over the entire length of the extraction aperture
For example, ion density may be greater near the center of the ribbon ion beam, and ion density may decrease in regions away from the center

Method used

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  • Workpiece processing method and apparatus
  • Workpiece processing method and apparatus
  • Workpiece processing method and apparatus

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Embodiment Construction

[0021] The invention discloses a system and method for processing workpieces. In some embodiments, the workpiece has been pretreated, and the pretreated workpiece is not uniform with respect to at least one parameter. For example, a workpiece may have had an uneven amount of material deposited in a previous process. In other embodiments, the workpiece may have had a non-uniform amount of material etched in a previous process. Alternatively, in other embodiments, the workpiece may subsequently receive a non-uniform treatment. In these cases, it would be beneficial to correct for prior processing non-uniformity, or to adjust for post-processing non-uniformity. In some embodiments, workpiece processing uniformity can be controlled by workpiece scan speed or variable bias duty cycle. In other embodiments, the uniformity of workpiece treatment may be controlled by manipulating the shape or density of the extracted ion beam.

[0022] figure 1 A first embodiment of a workpiece p...

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Abstract

A system and method for processing a workpiece is disclosed. A plasma chamber is used to create a ribbon ion beam, extracted through an extraction aperture. A workpiece is translated proximate the extraction aperture so as to expose different portions of the workpiece to the ribbon ion beam. As the workpiece is being exposed to the ribbon ion beam, at least one parameter associated with the plasma chamber is varied. The variable parameters include extraction voltage duty cycle, workpiece scan velocity and the shape of the ion beam. In some embodiments, after the entire workpiece has been exposed to the ribbon ion beam, the workpiece is rotated and exposed to the ribbon ion beam again, while the parameters are varied. This sequence may be repeated a plurality of times.

Description

[0001] This application claims priority to U.S. Provisional Patent Application No. 62 / 064,740, filed October 16, 2014, and U.S. Patent Application No. 14 / 848,519, filed October 8, 2015, the disclosures of which are incorporated by reference in their entirety way incorporated into this article. technical field [0002] Embodiments of the present disclosure are directed to systems and methods for processing workpieces. Background technique [0003] Typically a plasma chamber is used to generate the plasma. Ions in this plasma are then extracted from the plasma chamber through an aperture to form an ion beam. This plasma can be generated in different ways. In one embodiment, the antenna is placed outside the plasma chamber, next to the dielectric window. Subsequently, the antenna is excited using an RF power source. Electromagnetic energy generated by the antenna is then passed through the dielectric window to excite the feed gas placed within the plasma chamber. [0004] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/22C23C14/54H01J37/32
CPCC23C14/221C23C14/54H01J37/32009H01J37/32412H01J37/32752H01J37/32935H01J2237/3365C23C14/48H01J37/32715H01J2237/332H01J2237/334H01J2237/336
Inventor 摩根·D·艾文斯凯文·安葛林丹尼尔·迪斯塔苏约翰·哈塔拉丝特芬·罗伯特·舍曼约瑟·C·欧尔森
Owner VARIAN SEMICON EQUIP ASSOC INC