Thin film transistor and manufacturing method thereof, array substrate, display device
A technology of thin film transistor and manufacturing method, applied in the fields of array substrate, display device, thin film transistor and manufacturing method thereof, can solve the problems of small contact area, large contact resistance, on-state current, influence of carrier mobility, etc.
Active Publication Date: 2020-04-03
BOE TECH GRP CO LTD
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- Description
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Problems solved by technology
[0004] When preparing a TFT, if the source and drain and the active region are manufactured in steps, after the active region is formed, the source and drain are doped to complete the source and drain, which will result in the source and drain after doping The active area is only in contact with the side corners, the contact area is small, and the contact resistance is extremely large, so it has a great influence on the on-state current and carrier mobility of the TFT.
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[0061] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0062]It should be noted that all expressions using "first" and "second" in the embodiments of the present invention are to distinguish two entities with the same name but different parameters or parameters that are not the same, see "first" and "second" It is only for the convenience of expression, and should not be construed as a limitation on the embodiments of the present invention, which will not be described one by one in the subsequent embodiments.
[0063] Based on the above purpose, the first aspect of the embodiments of the present invention provides a thin film transistor capable of improving the contact resistance of the thin film transistor. Such as figure 1 Shown is a schematic cross-sectional structure dia...
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Abstract
The invention discloses a thin film transistor comprising a source, a drain, and an active region. The doping concentration of a first contact part of the active region contacting the source and the doping concentration of a second contact part of the active region contacting the drain are higher than the doping concentration of a main part of the action region. The invention further discloses a manufacturing method of the thin film transistor, an array substrate, and a display device. By adopting the thin film transistor and the manufacturing method thereof, the array substrate, and the display device disclosed by the invention, the contact resistance of the thin film transistor can be improved, and the performance of the thin film transistor can be enhanced.
Description
technical field [0001] The present invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof, an array substrate, and a display device. Background technique [0002] Commonly used display panels include a liquid crystal display panel (LCD), an organic light emitting diode display panel (OLED), and the like. When these display panels adopt an active matrix driving method, an array substrate having an array of thin film transistors (TFTs) needs to be provided, and the TFTs are used as switches for controlling pixels, which are directly related to the performance of the display panel. [0003] However, in the process of realizing the present invention, the inventors found that the existing TFT has the following problems: [0004] When preparing a TFT, if the source and drain and the active region are manufactured in steps, after the active region is formed, the source and drain are doped to complete the source...
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IPC IPC(8): H01L29/786H01L29/08H01L29/36H01L21/336H01L27/12
CPCH01L27/1222H01L29/0847H01L29/36H01L29/66757H01L29/78666H01L27/1255H01L27/1288
Inventor 李小龙李栋刘政田雪雁李良坚
Owner BOE TECH GRP CO LTD