A target material margin measuring device

Abstract

A device for measuring the remaining amount of a target material, comprising: a main body, which is provided with a plurality of measuring tracks that are arranged along a first direction, wherein each measuring track extends along a second direction, the second direction being perpendicular to the first direction; a plurality of ejector pins, which correspond one-to-one to the plurality of measuring tracks, each ejector pin extending along the second direction, and a first end of each ejector pin being limited within the measuring track corresponding thereto, wherein each ejector pin may move freely along the measuring track and may partly extend out from the measuring track; a plurality of sliding blocks, which correspond one-to-one to the plurality of measuring tracks, wherein each sliding block may be disposed within a measuring track so as to slide along the measuring track corresponding thereto, and each sliding block is limited to a side of a first end of an ejector pin, the static friction between each sliding block and measuring track being greater than the gravity thereof; and a main ruler, which is disposed on the main body and which is provided with scale lines that are arranged along the second direction. The measurement steps for the foregoing device for measuring the remaining amount of a target material are simple, and measurement results are accurate.

Description

technical field [0001] The invention relates to the technical field of vacuum magnetron coating, in particular to a target margin measuring device. Background technique [0002] In the field of thin film transistor (TFT) and liquid crystal display manufacturing, physical vapor deposition technology is often used. This technology generally uses magnetron sputtering equipment to bombard the target with argon (Ar) atoms to deposit the target particles on the surface of the substrate to achieve deposition. The purpose of film formation. Vertical magnetron sputtering equipment is a commonly used magnetron sputtering equipment at present; the magnet behind the target can improve the utilization rate of the target to a certain extent, but, due to the movement of the magnet, it will form on the surface of the target The etching curve is uneven, and when the deepest part of the etching exceeds the thickness of the target, it will cause the target to break down and become unusable. T...

AI Technical Summary

Problems solved by technology

[0004] The invention discloses a target material residual measurement device, which is used to solve the problem of cumbersome steps and large errors in the measurement of residual target etching amount

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