Unlock instant, AI-driven research and patent intelligence for your innovation.

Dynamic Sense Amplifier with Offset Compensation

A compensation circuit and inverter technology, applied in the field of memory circuits, can solve problems such as affecting the performance of electronic equipment

Active Publication Date: 2021-05-07
STMICROELECTRONICS (ROUSSET) SAS +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such data errors are highly undesirable as they may negatively affect the performance of electronic devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dynamic Sense Amplifier with Offset Compensation
  • Dynamic Sense Amplifier with Offset Compensation
  • Dynamic Sense Amplifier with Offset Compensation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] In the following description, numerous details are given to provide an understanding of the present disclosure. It will be understood, however, by those skilled in the art that the disclosed embodiments may be practiced without these specific details and that numerous variations or modifications from the described embodiments are possible.

[0015] initial reference figure 1 , the sense amplifier circuit 100 is now described. The sense amplifier circuit 100 includes a sense amplifier core 110 having a sensor coupled to receive a first bit line signal IL and a second bit line signal IR from a first precharge circuit 120 and a second precharge circuit 130, respectively. A pair of differential inputs. Now, the precharge circuits 120 , 130 will be briefly described before describing the sense amplifier core 110 .

[0016] The first precharge circuit 120 includes a PMOS transistor T5 and an NMOS transistor T6 having a drain-drain coupling arrangement between a power suppl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This openness involves dynamic sensors with offset compensation.A device, including the first and second reflectors, each anti -phase device has signal input, signal output, high voltage power supply terminals and low voltage power supply terminals.The signal input of the first anti -phase input coupling to the signal output of the second reflector, and the signal input coupling of the second reflector input to the signal output of the first reflector.The first transistor has the first electrical terminal of the coupling to the power node, the second -guide terminal of the high -voltage power supply terminal with coupling to the first reflector, and the control terminal of coupling to the first node.The second transistor has the first electrical terminal of the coupling to the power node, the second -guide terminal of the high -voltage power supply terminal with coupling to the second reflector, and the control terminal of coupling to the second node.The first and second lines are coupled to the first and second nodes.

Description

technical field [0001] The present disclosure relates to the field of memory circuits, and more particularly to dynamic sense amplifiers for circuits capable of compensating for voltage offsets. Background technique [0002] Various electronic devices, such as laptop computers, smart phones, and tablet computers, are widely used today. Such electronic devices typically include a microprocessor, volatile storage for use by the microprocessor in executing application software, and non-volatile storage for long-term storage of applications and data. [0003] Sense amplifiers are used in such non-volatile or volatile memory devices such that the voltage swing on their bit lines is reduced. Among various sense amplifier configurations, cross-coupled sense amplifiers are used in non-volatile memory circuits. Known cross-coupled sense amplifiers include a pair of inverters "cross-coupled" between a pair of bit lines. The input of each inverter is connected to one bit line and it...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/06
CPCG11C7/062G11C7/065G11C7/12H03K5/003G11C7/06
Inventor F·拉罗萨A·康特
Owner STMICROELECTRONICS (ROUSSET) SAS