Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Device for studying relationship between stress and magnetic memory effect

A magnetic memory and effect technology, which is applied in the direction of force measurement by measuring the change of magnetic properties of materials caused by applied stress, can solve the problems of easy interference and indirect detection in the detection scheme of magnetic sensitive components, and avoid measurement system errors. Effect

Active Publication Date: 2017-09-05
TOMATO TECH WUHAN
View PDF7 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above problems, the object of the present invention is to provide a device for studying the relationship between stress and magnetic memory effect, which aims to solve the problem that the existing magnetic sensitive element detection scheme is susceptible to interference, and the measurement result is the magnetic field H instead of the magnetization M problem, as well as the problem of indirect detection in existing magneto-optical Kerr effect stress detection schemes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device for studying relationship between stress and magnetic memory effect
  • Device for studying relationship between stress and magnetic memory effect
  • Device for studying relationship between stress and magnetic memory effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] figure 1 The structure of the device for studying the relationship between the stress and the magnetic memory effect provided by the embodiment of the present invention is shown, and only the parts related to the embodiment of the present invention are shown for convenience of description.

[0023] The device for studying the relationship between stress and magnetic memory effect provided by this embodiment includes a fixed table 1 made of non-magnetic metal material, on which a ferromagnetic device 2 to be tested is installed, and the fixed table can be used for all The ferromagnetic device 2 to be tested is stretched and compressed, and the device also includes a laser emitter 3 , a polarizer 4 , a first focusing lens 51 and a second focusing lens 52 , an analyzer 6 and a photosensitive element 7 . The laser emitter 3 emits laser light and passes through the polarizer 4 to become a linearly polarized laser. The polarization angle of the polarizer is adjustable. After ...

Embodiment 2

[0025] figure 2 The structure of the device for studying the relationship between the stress and the magnetic memory effect provided by the embodiment of the present invention is shown, and only the parts related to the embodiment of the present invention are shown for convenience of description.

[0026] The device for studying the relationship between stress and magnetic memory effect provided by this embodiment includes a fixed table 1 made of non-magnetic metal material, on which a ferromagnetic device 2 to be tested is installed, and the fixed table can be used for all The ferromagnetic device 2 to be tested is stretched and compressed, and the device also includes a laser emitter 3 , a polarizer 4 , a focusing lens 53 , an analyzer 6 and a photosensitive element 7 . The focusing lens 53 is located directly above the ferromagnetic device 2 to be tested, and the device also includes a reflector 8, which is arranged in front of the optical path of the analyzer 6, and the l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Heart wavelengthaaaaaaaaaa
Login to View More

Abstract

The invention is applicable to the field of nondestructive testing, and provides a device for studying the relationship between stress and magnetic memory effect. The device comprises a fixed platform. A ferromagnetic device to be tested is mounted on the fixed platform. The fixed platform can stretch and compress the ferromagnetic device to be tested. The device further comprises a laser transmitter, a polarizer, an optical focusing lens component, an analyzer, and a photosensitive element. Laser emitted by the laser transmitter is changed into linearly polarized laser after passing through the polarizer. The linearly polarized laser, after passing through the optical focusing lens component, focuses and shines on the surface of the ferromagnetic device to be tested. After the linearly polarized laser is reflected, reflected laser focuses through the optical focusing lens component, passes through the analyzer, and shines on the photosensitive element. By making use of the advantages of the magneto-optical Kerr effect, the device can be used to study the relationship between stress and magnetic memory effect in ferromagnetic materials, and can be applied to crack detection. The device of the invention has strong anti-interference performance, and avoids systematic error caused by indirect measurement using a flexible substrate and a magnetic film.

Description

technical field [0001] The invention belongs to the technical field of non-destructive testing, in particular to a device for studying the relationship between stress and magnetic memory effect. Background technique [0002] There are many existing stress nondestructive testing schemes, and stress nondestructive testing of ferromagnetic devices based on the metal magnetic memory (Metal Magnetic Memory, MMM) effect is an emerging method. This magnetic memory effect is a natural phenomenon that ferromagnetic metals produce spontaneous magnetization and spontaneous leakage field (Self-Magnetic Leakage Field, SMLF) under the joint action of the geomagnetic field and periodic load or stress. Existing non-destructive testing devices or instruments that use magnetic memory effects to detect stress generally use magnetic sensitive elements to read spontaneous leakage magnetic fields. This scheme can obtain the stress information of the ferromagnetic device to a certain extent, but ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01L1/12
CPCG01L1/12
Inventor 卢永雄阮鸥吴路明
Owner TOMATO TECH WUHAN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com