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Semiconductor device structure

A device structure and semiconductor technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of high drift rate and resistance drift of thin-film resistors, so as to avoid piezoresistive effect and reduce The effect of pressure

Active Publication Date: 2019-10-11
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the existing semiconductor devices are sufficient for their original intended use, they are still not completely satisfactory in all aspects. Stress (mechanical stress) is one of the main causes of resistance drift

Method used

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  • Semiconductor device structure
  • Semiconductor device structure
  • Semiconductor device structure

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Embodiment Construction

[0033] The layout of the semiconductor device structure of the present invention will be described in detail below. It should be appreciated that the following description provides many different embodiments or examples for implementing different aspects of the invention. The specific components and arrangements described below are intended to briefly describe the present invention. Of course, these are only examples rather than limitations of the present invention. Furthermore, repeated reference numerals or designations may be used in different embodiments. These repetitions are only for the purpose of simply and clearly describing the present invention, and do not represent any relationship between the different embodiments and / or structures discussed. Furthermore, when it is mentioned that a first material layer is located on or above a second material layer, it includes the situation that the first material layer is in direct contact with the second material layer. Alt...

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Abstract

The invention provides a structure of a semiconductor device. The structure comprises a semiconductor substrate, an inner metal layer is arranged on the semiconductor substrate, a top metal layer is arranged on the inner metal layer and includes first and second parts, the first part covers the inner metal layer completely, the second part surrounds the first part and is separated from the first part, and a passivation layer is arranged on the top metal layer, and includes hollowed patterns so as to expose the top metal layer. The hollowed patterns can be laid out in different manners, the layout manners can be used to reduce the pressure caused by the passivation layer, and the top metal layer is arranged under the hollowed patterns of the passvation layer so as to protect components thereunder. In addition, the top metal layer laid out in strip, sheet or annular shape serves as a buffer structure between the passivation layer and the semiconductor substrate, anisotropic pressure generated in post technologies can be reduced, and components in the lower layers are avoided from generating a piezoresistive effect.

Description

technical field [0001] The present invention relates to semiconductor device structures, and more particularly to the layout of passivation layers and top metal layers of semiconductor device structures. Background technique [0002] In recent years, semiconductor devices have developed rapidly in the fields of computers, consumer electronics, and the like. At present, semiconductor device technology has been widely accepted in the product market of metal oxide semiconductor field effect transistors, and has a high market share. [0003] Thin-film resistors are widely used in various integrated circuits, among which polysilicon resistors are one of the main high-resistance components. Due to the vigorous development of smart products, Internet of Things (networking) and automotive electronics in recent years, the precision of thin film resistors has been paid more attention. Although the existing semiconductor devices are sufficient for their original intended use, they ar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/64H01L21/768
Inventor 林庭佑涂祈吏
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION