Carrier storage enhanced super-junction IGBT (Insulated Gate Bipolar Transistor)

Abstract

The invention provides a super-junction IGBT (Insulated Gate Bipolar Transistor) device. Forbidden bands of semiconductor materials of emitter regions are wider than other semiconductor regions; and base regions and emitters are connected through a diode or two diodes which are connected in series along the same direction or more diodes which are connected in series along the same direction. Forward switch-on voltages of diode accesses between the base regions and the emitters are smaller than the forward switch-on voltages of hetero-junctions formed in the emitter regions. When forward switch-on is carried out, the diodes between the base regions and the emitters are switched on, potentials of the base regions are raised and few carriers injected from collector regions to voltage resistant regions are prevented from being collected, so the storage effect for the carriers in the voltage resistant regions is improved. Compared with a traditional super-junction IGBT, the super-junction IGBT provided by the invention has the advantage of obtaining lower switch-on voltage reduction.

Description

technical field [0001] The present invention pertains to semiconductor devices, especially semiconductor power devices. Background technique [0002] Generally, semiconductor power devices require high breakdown voltage, low on-voltage or on-resistance (ie, low on-state power consumption), fast switching speed (ie, low switching power consumption), and high reliability. Insulated gate bipolar transistor (InsulatedGate Bipolar Transistor, IGBT) introduces minority carriers to participate in conduction, so a lower turn-on voltage can still be obtained under a higher withstand voltage. In addition, the IGBT has a current saturation capability, and the gate controls the turn-on and turn-off of the device, so it has high reliability. The super-junction withstand voltage layer is a withstand voltage structure in which n-columns / p-columns are alternately arranged. This structure can greatly increase the doping concentration of n-columns and p-columns and obtain a higher withstand ...

AI Technical Summary

Problems solved by technology

However, the minority carrier storage effect in the withstand voltage layer of the super-junction IGBT is relatively weak

Taking the n-channel superjunction IGBT as an example, since the pn junction formed by the n-column / p-column has a large area, the minority carrier holes injected into the n-column from the p-type collector region are easily collected by the p-column and enter the p-type base. region, and flow into the emitter, so the storage effect of minority carrier holes in the withstand voltage layer is relatively weak, which will increase the on-voltage

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