Hot field for single crystal furnace and single crystal furnace

Abstract

The invention discloses a thermal field for a single crystal furnace. The thermal field for the single crystal furnace comprises a crucible and a cooling member located above the crucible. The thermal field for the single crystal furnace further comprises a sheath, wherein the sheath is arranged at one side, close to the central axis of the crucible, of the cooling member. The invention discloses the single crystal furnace. The single crystal furnace comprises a furnace body and the thermal field for the single crystal furnace, wherein the thermal field for the single crystal furnace is located in the furnace body. According to the single crystal furnace and the thermal field therefor, disclosed by the invention, the problem in the prior art that increasing of crystal pulling speed and improving of monocrystal quality cannot be achieved simultaneously during monocrystal pulling is solved. The single crystal furnace and the thermal field therefor, disclosed by the invention, have the cooling member, so that the temperature gradient can be optimized, the crystal pulling speed can be increased, and the crystal pulling cost can be reduced; and the sheath is arranged, so that grown crystals can be prevented from impurity contamination, and crystal products with good minority carrier lifetime can be provided.

Description

technical field [0001] The invention belongs to the technical field of single crystal manufacturing equipment, specifically relates to a thermal field for a single crystal furnace, and also designs a single crystal furnace with the thermal field for a single crystal furnace. Background technique [0002] With the continuous development of the world economy, the demand for high-efficiency energy in modernization is increasing. Photovoltaic power generation, as a green energy source and a major energy source for the sustainable development of human beings, has been increasingly valued by countries all over the world and has been vigorously developed. As a basic material for photovoltaic power generation, monocrystalline silicon wafers have a wide market demand. The Czochralski single crystal silicon growth method is a common single crystal growth method. The growth process is to immerse the seed crystal in the melt in the single crystal furnace, and then implement the seeding...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a thermal field for a single crystal furnace, which solves the problem that the existing thermal field is difficult to simultaneously increase the crystal pulling speed and improve the quality of the single crystal

[0004] The object of the present invention is also to provide a single crystal furnace with the thermal field for the single crystal furnace, which solves the problem that existing single crystal furnaces are difficult to simultaneously increase the crystal pulling speed and improve the quality of the single crystal.

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