Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A class of organic transistor storage electret material and its preparation method and application

A technology of organic transistors and electrets, which is applied to the application of materials in the field of electric storage of organic transistors, and the field of preparation and synthesis of charge storage materials, can solve the problems that have been explored, and achieve enhanced solubility, mild reaction conditions, and low toxicity. Effect

Active Publication Date: 2020-03-31
NANJING UNIV OF POSTS & TELECOMM
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with conjugated polymers, π-stacking polymers have more flexible conformational changes and rapid responses to external stimuli. From this perspective, stacking polymers are excellent materials for exploring conformational relationships. An explanation for trapping has not been explored from π-packed structures

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A class of organic transistor storage electret material and its preparation method and application
  • A class of organic transistor storage electret material and its preparation method and application
  • A class of organic transistor storage electret material and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

example

[0041] Example implementation 2, THF:Tol=1:1 solvent 80mL is placed in a 100mL Erlenmeyer flask, DC8BrF (1.6g, 3.42mmol) is dissolved in this organic solvent; newly configured K2 CO 3 / KF (2M) aqueous solution was also placed in another 100mL Erlenmeyer flask, and both were bubbled to remove oxygen for 2h. DBC8OPFOH (1g, 1.57mmol) and bis(triphenylphosphine)palladium dichloride (0.22g, 0.314mmol) were added to a dry two-necked flask. Inject the DC8BrF solution into the two-necked bottle under N2 atmosphere, raise the temperature to 90°C, and inject K 2 CO 3 / KF (2M) aqueous solution 5mL. After reacting for 48 hours, it was detected that the reaction was complete, quenched by adding water, extracted with dichloromethane several times, combined the oil phases and dried over anhydrous sodium sulfate. Column chromatography used petroleum ether: dichloromethane = 3:1 as eluent to obtain light yellow Oily product 1.2 g (61% yield). 1 H NMR (400MHz, CDCl 3 ,δ):7.81(d,J=8.0Hz,2H...

Embodiment 7

[0050] Implementation example 7, the present invention provides a method for preparing a transistor storage device, the device is prepared on a heavily doped n-type silicon wafer, and the 300nm thick SiO grown on the Si wafer 2 as a gate insulating layer. Si / SiO 2 The substrates were ultrasonically cleaned in toluene, acetone, and ethanol for 20 minutes, and finally the substrates were cleaned with deionized water, and then dried in an oven at 80°C for 30 minutes. The toluene solutions of PVK, P1, P2 and P3 were spin-coated on the substrate to form a 20nm thick film, and the corresponding concentrations of each solution were 8mgmL -1 , 6mgmL -1 , 5mgmL -1 and 8mgmL -1 . These spun-on substrates were then placed in an oven at 80°C for 30 min. Then take out the silicon wafer and put it on the mask plate and put it into the vacuum evaporation table, and heat the evaporation table in stages until the work is stable, at a pressure of 5×10 -4 Pa, deposition rate Pentacene w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a class of organic transistor storage electret material and its preparation method and application. The method uses PVK (polyvinyl carbazole) as the starting material and introduces various groups through Friedel-Crafts reaction to change the The purpose of material storage properties. The specific reaction formula is as follows: This method has the following characteristics: different types and quantities of groups can be introduced to obtain materials with different properties; the process is simple, the raw materials are cheap, and the reaction conditions are easy to control; Scale solution processing; can significantly improve the charge storage capacity of storage materials; therefore, Friedel-Crafts post-modification method is an effective means to quickly obtain storage with excellent performance. At the same time, since bulk PVK is also a multi-purpose optoelectronic material, this method can also be extended to methods for preparing other optoelectronic device materials, such as light-emitting diodes, memristors, and diode storage materials. Therefore, the method has good application prospects in the field of organic photoelectric materials.

Description

technical field [0001] The invention belongs to the technical field of organic semiconductor materials, in particular to a method for preparing and synthesizing a class of charge storage materials, and to the application of these materials in the fields of organic transistor electrical storage and the like. Background technique [0002] PVK (polyvinyl carbazole) has been used as a high-efficiency photoelectric material. It was first synthesized in 1937. Its use can be traced back to World War II. Since it was discovered to have a photoelectric effect in the 1960s, its research It has been enduring. Mainly focus on the research of luminescence and storage, and focus on the application of PVK in storage in the invention. There have been a lot of researches on the cause of charge generation and conduction mechanism of PVK materials, and PVK is often used as a charge storage material in the application field of diode memory [Ling Q, Song Y, Ding S J, Zhu C, Chan D S H, Kwong D ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C08F126/12C08F8/34H01L51/05H01L51/30
CPCC08F8/34H10K85/141H10K10/46C08F126/12
Inventor 解令海冯全友李亚彬仪明东凌海峰常永正黄维
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com