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Methods for semiconductor regrowth

A semiconductor and regrowth technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as dislocations

Inactive Publication Date: 2017-10-10
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the quality of the regrowth region above the blanket formed film (formed of the same material as the regrowth region) is generally improved, defects such as dislocations are still observed

Method used

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  • Methods for semiconductor regrowth
  • Methods for semiconductor regrowth
  • Methods for semiconductor regrowth

Examples

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Embodiment Construction

[0041] The making and using of embodiments of the invention are discussed in detail below. It should be appreciated, however, that the described embodiments provide applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments described are exemplary and are not intended to limit the scope of the invention.

[0042] A method of regrowing a semiconductor region is provided according to various exemplary embodiments. Intermediate stages of performing regrowth are shown, according to some embodiments. Variations of the examples are discussed. Like numerals are used to refer to like elements throughout the various views and exemplary embodiments.

[0043] refer to figure 1 , a substrate 20 is provided. The substrate 20 may be a semiconductor substrate, and may further be a silicon substrate. Isolation regions such as shallow trench isolation (STI) 22 are formed in substrate 20 . The STI region 22 may be formed by trench...

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Abstract

A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region. The invention also discloses a methods for semiconductor regrowth.

Description

[0001] This application is a divisional application with application number 201210546096.2 and titled "Method for Re-growth of Semiconductor" filed on December 14, 2012. This application claims priority to the following provisionally filed U.S. patent application: Application Serial No. 61 / 580,939, filed December 28, 2011, entitled "Pre-Clean for SiGe Epitaxy in a CMOS Process and Resulting Structures," which The application is hereby incorporated by reference. technical field [0002] The present invention relates to the field of semiconductor technology, and more particularly, to a method for semiconductor regrowth. Background technique [0003] The speed of a Metal Oxide Semiconductor (MOS) transistor is closely related to the driving current of the MOS transistor, which is also closely related to the mobility of charges. For example, an NMOS transistor has a high drive current when electron mobility is high in a channel region of the NMOS transistor, and a PMOS transist...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/3065H01L21/336H01L29/78
CPCH01L21/02057H01L21/02381H01L21/02532H01L21/02538H01L21/02658H01L21/3065H01L29/66636H01L29/66795H01L29/78H01L29/785H01L21/02634H01L21/02661
Inventor 万政典林佑儒李宜静吴政宪柯志欣万幸仁
Owner TAIWAN SEMICON MFG CO LTD