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Chip size level deep ultraviolet light emitting diode eutectic packaging method

A technology of light-emitting diodes and chip size, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve the effects of improving life, solving heat dissipation problems, and saving packaging volume

Active Publication Date: 2019-07-23
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these packages are all packaged for blue and red LED chips. For deep ultraviolet LED packages, special processes and special materials are required.

Method used

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  • Chip size level deep ultraviolet light emitting diode eutectic packaging method
  • Chip size level deep ultraviolet light emitting diode eutectic packaging method
  • Chip size level deep ultraviolet light emitting diode eutectic packaging method

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Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0026] In an exemplary embodiment of the present invention, a chip-scale deep ultraviolet light emitting diode eutectic packaging method is provided. figure 1 It is a schematic flow chart of a chip-scale deep ultraviolet light-emitting diode eutectic packaging method according to an embodiment of the present invention, figure 2 It is a cross-sectional view of the packaging structure of the eutectic packaging method for chip-scale deep ultraviolet light-emitting diodes according to the embodiment of the present invention. Such as figure 1 As shown, the eutectic packaging method for chip-scale deep ultraviolet light-emitting diodes of the present invention includes the following steps: fixing a single chip with separate P...

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Abstract

The invention provides a chip sized deep ultraviolet light emitting diode eutectic packaging method. The method includes the steps of fixing a deep ultraviolet chip with separated P and N electrodes to a quartz lens; filling a liquid glue to the side surface of the deep ultraviolet chip to make the upper surface of the liquid glue be flushed with the P and N electrodes of the deep ultraviolet chip, and solidifying the liquid glue; fixing a first AuSn sheet above the P and N electrodes of the deep ultraviolet chip to cover the upper surface of the liquid glue, and reserving the isolation channel of the P and N electrodes; fixing a second AuSn sheet to a substrate, wherein the second AuSn sheet is aligned with the first AuSn sheet vertically; and performing the eutectic fusion of the first AuSn sheet and the second AuSn sheet to complete the packaging. The chip size technology is applied to the deep ultraviolet LED packaging, so that the packaging efficiency is improved, the packaging cost is reduced, the cooling problem of the deep ultraviolet LED chip is solved by the eutectic packaging technology, and the service life of the deep ultraviolet LED can be prolonged.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for eutectic packaging of chip-scale deep ultraviolet light-emitting diodes. Background technique [0002] Deep ultraviolet LEDs are mainly used in fields such as sterilization and disinfection, light curing, medical and health care, biochemical detection, and secure communication. At present, traditional ultraviolet mercury lamps still occupy a dominant position in the ultraviolet light source market. In contrast, deep ultraviolet LEDs have many advantages such as small and portable, low voltage, low power consumption, easy integration, and environmental friendliness. In recent years, technological development and market growth have been very fast. Rapidly, it has become a high value-added growth point in the LED field. [0003] At present, the core technical barriers of deep ultraviolet LEDs lie in its epitaxial materials and chip preparation. The s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/48H01L33/58
CPCH01L33/005H01L33/48H01L33/58
Inventor 谢海忠闫建昌魏学成魏同波宋昌斌张韵王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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