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Multifunctional sensor based on double-gate thin film transistor and preparation method thereof

A thin-film transistor and multi-functional technology, applied in the field of sensors, can solve the problems of high production cost, crosstalk between adjacent components, affecting detection accuracy, etc., and achieve the effect of saving preparation time, improving efficiency and providing accuracy.

Pending Publication Date: 2017-10-27
SYSU CMU SHUNDE INT JOINT RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At this stage, most electronic skins use a variety of different materials to detect pressure and temperature, which makes their preparation process very complicated.
For example, when integrating a capacitive pressure sensor, there is usually a problem of crosstalk between adjacent components, which will affect the detection accuracy during the period; when integrating a CMOS pressure sensor, there will be high manufacturing costs and incompatibility with flexible substrates. Bottom question

Method used

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  • Multifunctional sensor based on double-gate thin film transistor and preparation method thereof
  • Multifunctional sensor based on double-gate thin film transistor and preparation method thereof
  • Multifunctional sensor based on double-gate thin film transistor and preparation method thereof

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Embodiment 1

[0045] The physical field in this embodiment includes a thermal field and a force field, that is, after being coupled with the double-gate thin film transistor 1, a sensor with temperature sensing and pressure sensing is formed. Specifically, it includes a sensor integrated on the same flexible substrate 15 and At least two double-gate thin film transistors 1 that are independent of each other, wherein at least one of the double-gate thin film transistors 1 is provided with a polarized piezoelectric material 12 or a non-polarized piezoelectric material 12 on the surface of the top gate 11; The surface of the piezoelectric material 12 is also provided with a metal material 14 . That is to say, at least one of them is used as a temperature sensing part, and one is used as a pressure sensing part.

[0046] Therefore, in the specific use process, when the external temperature changes, the non-polarized piezoelectric material changes, that is, the capacitance changes, and then the ...

Embodiment 2

[0069] The only difference between this embodiment and Embodiment 1 is that the number of double-gate thin film transistors 1 provided in the present invention is three, specifically as Figure 4 As shown, the multi-functional sensor based on double-gate thin film transistors includes three double-gate thin film transistors 1, wherein the surface of the top gate 11 of one is provided with a polarized piezoelectric material 12, and the top gates of the other two A non-polarized piezoelectric material 12 is provided on the surface of the pole 11 , and then a metal material 14 is provided on the surface of the piezoelectric material 12 . That is to say: the dual-gate TFT-based multifunctional sensor of the present invention is provided with two temperature sensing parts and a single pressure sensing part. Its specific working principle and preparation method are consistent with those in Example 1, and will not be repeated here.

Embodiment 3

[0071] The difference between this embodiment and Embodiment 1 is that the physical field is a magnetic field, which is coupled with the top gate 11 of the double-gate thin film transistor 1 to form a magnetic sensor, which is used in combination with a memristor, such as Figure 5 shown.

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Abstract

The present invention discloses a multifunctional sensor based on double-gate thin film transistors. The sensor comprises the double-gate thin film transistors and one or more physical fields coupled to top gates of the double-gate thin film transistors, and the physical fields comprise a light field, a thermal field, a force field and a magnetic field. The physical fields are the thermal field and the force field. The multifunctional sensor based on double-gate thin film transistors comprises at least two independent double-gate thin film transistors integrated to a same flexible substrate, wherein the top gate surface of at least one double-gate thin film transistor is provided with a polarized piezoelectric material or non-polarized piezoelectric material, and the surface of the piezoelectric material is provided with a metal material. The multifunctional sensor based on double-gate thin film transistors can be coupled to different physical fields to from sensors with different functions.

Description

technical field [0001] The invention belongs to the technical field of sensors, and in particular relates to a multi-functional sensor based on a double-gate thin film transistor and a preparation method thereof. Background technique [0002] As a fundamental building block of large-area electronics, dual-gate thin-film transistors and related products have enjoyed an exciting development and implementation timeline. Its primary application, flat-panel displays, has grown into a multi-billion dollar industry that continues to thrive. However, the potential of TFTs in non-display applications has been little explored and has not yet matured. [0003] For example, flexible electronic skin is a new type of robotic skin, which can be applied to humanoid robots and can be flexible and bendable. At the same time, it can also act on its surface to detect pressure and the temperature of the surrounding environment. [0004] At present, most electronic skins use a variety of diffe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01D5/12G01K7/34G01L1/16
CPCG01D5/12G01K7/34G01L1/16
Inventor 王凯李伟伟冯肖
Owner SYSU CMU SHUNDE INT JOINT RES INST
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