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Transient voltage suppressor and manufacturing method thereof

A technology of transient voltage suppression and manufacturing method, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, circuit, etc., can solve the problems of increasing device manufacturing cost, large device area, reducing device performance, etc. Small device area and the effect of reducing leakage current

Active Publication Date: 2017-10-27
嘉兴市晨阳箱包有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the additional capacitance introduced by these two structures is large, and the device area is large, which reduces the device performance and increases the device manufacturing cost.

Method used

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  • Transient voltage suppressor and manufacturing method thereof
  • Transient voltage suppressor and manufacturing method thereof
  • Transient voltage suppressor and manufacturing method thereof

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Embodiment Construction

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0035] In order to solve the technical problems of the prior art transient voltage suppressors such as large area, high process difficulty and high device manufacturing cost, the present invention provides an improved transient voltage suppressor, please refer to figure 1 and figure 2 , figure 1 is a schematic structural diagram of the transient voltage suppressor 100 of the present invention, figure 2 yes figure 1 The schematic diagram of the equivalent circuit of the transient voltage suppressor 100 is shown. ...

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Abstract

The invention provides a transient voltage suppressor which includes a P type substrate and an N type epitaxial layer. The N type epitaxial layer comprises a first part and a second part. The transient voltage suppressor also comprises a first P type doping area formed at the surface of a first part, a second P type doping area formed at the surface of a second part, and a P type epitaxial layer formed on the N type epitaxial layer, the first P type doping area and the second P type doping area. A first diode is formed by the P type substrate and the first part, a second diode is formed by the P type substrate and the second part, a third diode connected to the first diode is formed by the first part and the first P type doping area, a fourth diode connected to the second diode is formed by the second part and the second P type doping area, the negative electrode of the first diode is connected to the negative electrode of the second diode, and the negative electrode of the third diode is connected to the negative electrode of the fourth diode.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a transient voltage suppressor and a manufacturing method thereof. 【Background technique】 [0002] Transient Voltage Suppressor (TVS) is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, and leakage Due to the advantages of small current and high reliability, it has been widely used in voltage transient and surge protection. Electrostatic discharge (ESD), along with other random voltage transients in the form of voltage surges, are commonly found in a variety of electronic devices. As semiconductor devices are increasingly miniaturized, high-density, and multi-functional, electronic devices are increasingly vulnerable to voltage surges, which can even cause fatal injuries. Transient current spikes can be ind...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L21/822
CPCH01L21/822H01L27/0255H01L27/0296
Inventor 何春晖
Owner 嘉兴市晨阳箱包有限公司
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