Transient-voltage suppressor and manufacturing method thereof

Abstract

The invention provides a transient-voltage suppressor and a manufacturing method thereof. The transient-voltage suppressor comprises an N-type substrate, an N-type epitaxial layer formed on the N-typesubstrate, a first P-type injection region, a second P-type injection region, a third P-type injection region, a first N-type injection region and a second N-type injection region, wherein the firstP-type injection region, the second P-type injection region and the third P-type injection region are formed on the surface of the N-type epitaxial layer; the first N-type injection region is formed on the surface of the first P-type injection region; the second N-type injection region is formed on the surface of the second P-type injection region; the third P-type injection region is located between the first P-type injection region and the second P-type injection region and connected with the first P-type injection region and the second P-type injection region; the first P-type injection region and the first N-type injection region form a first diode; the second P-type injection region and the second N-type injection region form a second diode; the third P-type injection region, the N-type epitaxial layer and the N-type substrate form a third diode; positive electrodes of the three diodes are connected; and negative electrodes of the three diodes are used for being connected to an external circuit.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a transient voltage suppressor and a manufacturing method thereof. 【Background technique】 [0002] Transient Voltage Suppressor (TVS) is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, and leakage Due to the advantages of small current and high reliability, it has been widely used in voltage transient and surge protection. Low-capacitance TVS is suitable for protection devices of high-frequency circuits, because it can reduce the interference of parasitic capacitance on the circuit and reduce the attenuation of high-frequency circuit signals. [0003] Electrostatic discharge (ESD) and other random voltage transients in the form of voltage surges are commonly found in various electronic devices. As semicond...

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Problems solved by technology

[0004] However, the currently commonly used trench TVS can only achieve unidirectional protection. If bidirectional protection is required, multiple TVS may need to be connected in series or in parallel, which increases the device area and manufacturing cost.

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