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Transient voltage suppressor and method of making the same

A technology of transient voltage suppression and manufacturing method, which is applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problems of increasing device area and manufacturing cost, and achieve the effect of improving protection characteristics and reliability

Inactive Publication Date: 2020-09-01
NANJING LISHUI HIGH-TECH VENTURE CAPITAL MANAGEMENT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently commonly used transient voltage suppressors (such as trench transient voltage suppressors) generally can only achieve unidirectional protection. If bidirectional protection is required, multiple transient voltage suppressors must be connected in series or in parallel, but this will increase Large device area and manufacturing cost

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  • Transient voltage suppressor and method of making the same
  • Transient voltage suppressor and method of making the same

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Embodiment Construction

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0036] see figure 1 , figure 1 is a schematic structural diagram of the transient voltage suppressor 100 of the present invention. The transient voltage suppressor 100 includes an N-type substrate, a first trench and a second trench formed on the surface of the N-type substrate, and a first P-type diffusion region formed on the surface of the first trench. The second P-type diffusion region formed on the surface of the second trench, the N-type epitaxy formed on the surface of the N-type substrate and the first and...

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Abstract

The invention relates to a transient voltage suppressor and a manufacturing method thereof. The transient voltage suppressor includes an N-type substrate, a first trench and a second trench formed onthe surface of the N-type substrate, first and second P-type diffusion regions formed on the surfaces of the first trench and the second trench, an N-type epitaxy formed on the surfaces of the N-typesubstrate and the first and second P-type diffusion regions, a silicon oxide layer formed on the N-type epitaxy, two third trenches which pass through the N-type epitaxy and extends to the N-type substrate and two sides of the first P-type diffusion region, two fourth trenches which pass through the N-type epitaxy and extends to the N-type substrate and two sides of the second P-type diffusion region, silicon oxide in the third and the fourth trenches, a first through hole corresponding to the first trench, a second through hole corresponding to the second trench, a P-type injection region which is formed at the surface of the N-type epitaxy, an N-type injection region formed on the surface of the P-type injection region, an opening corresponding to the N-type injection region, and a P-type injection layer formed at the other side of the N-type substrate.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a transient voltage suppressor and a manufacturing method thereof. 【Background technique】 [0002] Transient Voltage Suppressor (TVS) is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, and leakage Due to the advantages of small current and high reliability, it has been widely used in voltage transient and surge protection. The low-capacitance transient voltage suppressor is suitable for the protection of high-frequency circuits, because it can reduce the interference of parasitic capacitance to the circuit and reduce the attenuation of high-frequency circuit signals. [0003] Electrostatic discharge (ESD), along with other random voltage transients in the form of voltage surges, are commonly found in a va...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0255
Inventor 冯林朱敏
Owner NANJING LISHUI HIGH-TECH VENTURE CAPITAL MANAGEMENT CO LTD
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