SOI MOSFET total dose radiation model building method

Abstract

The invention provides an SOI MOSFET total dose radiation model building method. The method comprises the steps of establishing a controlled current source, wherein the controlled current source is connected in parallel between the source end and the drain end of an MOSFET device, and the current magnitude of the controlled current source is controlled by the gate end, the source end, the body end and the drain end of the MOSFET device and the total dose; establishing a controlled voltage source, wherein the controlled voltage source is connected in series to the gate end of the MOSFET device, and the voltage size of the controlled voltage source is controlled by the total dose; and packaging the controlled current source, the controlled voltage source and the MOSFET device to form an SOI MOSFET total dose radiation model. According to the SOI MOSFET total dose radiation model building method, an NMOS and a PMOS can be simulated at the same time; the drift of a threshold voltage can be simulated; and the characteristics of MOSFETs with all sizes and all radiation doses can be simulated, so that the simulation accuracy is greatly improved.

Description

technical field [0001] The invention relates to the technical field of device intensive model modeling, in particular to a modeling method of an SOI MOSFET total dose irradiation model. Background technique [0002] SOI (Silicon-On-Insulator, silicon on insulating substrate) is a radiation-resistant silicon-based structure, which can be applied to aerospace electronics and has an inherent immune advantage to cosmic radiation. The total dose effect is an effect that irreversibly affects the device characteristics after a large amount of cosmic rays accumulate in the material, often causing device failure. Although SOI has a special structure, its total dose effect is still obvious, which needs to be alleviated through design and material reinforcement. [0003] The MOSFET intensive model (also called SPICE model) is a model that circuit designers directly invoke to simulate large-scale circuits. It uses specific syntax to express the model, and provides the physical characte...

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Problems solved by technology

[0007] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of modeling method of SOI MOSFET total dose irradiation model, be used to solve the leakage problem that SOI total dose SPICE model can't simultaneously simulate NMOS and PMOS in the prior art. The magnitude of the current and threshold voltage drift will cause errors in the simulation results and affect the evaluation of the circuit, etc.

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