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Ion implantation device and ion implantation method

An ion implantation equipment and ion implantation technology, applied in the field of ion implantation equipment, can solve problems such as complex procedures, high production costs, and low production efficiency, and achieve the effects of simplifying the ion doping process, low cost, and low production efficiency

Inactive Publication Date: 2017-11-14
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Application Information

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Problems solved by technology

However, the photoresist process requires multiple processes such as coating photoresist, exposure, photoresist etching, and development, and the process is complicated, resulting in low production efficiency and high production costs.

Method used

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  • Ion implantation device and ion implantation method
  • Ion implantation device and ion implantation method
  • Ion implantation device and ion implantation method

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Embodiment Construction

[0015] The following will clearly and completely describe the technical solutions of each exemplary embodiment provided by the present invention with reference to the accompanying drawings in the embodiments of the present invention. In the case of no conflict, the following embodiments and technical features thereof can be combined with each other. Moreover, the directional terms used in the following embodiments of the present invention, such as "upper" and "lower", are used to better describe the embodiments, and are not used to limit the protection scope of the present invention.

[0016] see figure 1 , is an ion implantation device according to an embodiment of the present invention. The ion implantation equipment 10 includes an ion generating mechanism 11, a mass analysis magnetic field 12, a converging magnetic field mechanism 13, a first transfer device (also called Glass Robot) 14, a second transfer device (also called Mask Robot) 15, a process chamber ( Process Cha...

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Abstract

The invention discloses an ion implantation device and an ion implantation method. The ion implantation device provided by the invention comprises a mask plate. The mask plate is provided with an opening region. During the ion implantation process, the mask plate is arranged above a predetermined position for carrying a substrate to be doped. The opening region of the mask plate and the doped region of the substrate to be doped are aligned, so that ions are implanted into the doped region through the opening region. According to the invention, an ion doping process can be simplified; low production efficiency is improved; and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of ion doping, in particular to an ion implantation device and an ion implantation method. Background technique [0002] Low Temperature Polycrystalline Silicon ThinFilm Transistor (LTPS-TFT) has the characteristics of high carrier mobility and high output current, and is often used in high-resolution displays. In the LTPS-TFT manufacturing process, the active layer needs to be doped with ions to form a doped region. Due to the multi-directionality of ion movement, it is necessary to cover the non-doped region with the help of photoresist technology, so that the ions can be accurately implanted into the predetermined doped region. However, the photoresist process requires multiple processes such as photoresist coating, exposure, photoresist etching, and development, and the process is complicated, resulting in low production efficiency and high production costs. Contents of the invention [0003] In view...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01L21/266
CPCH01J37/3171H01L21/266
Inventor 黄奔
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD