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Solar cell of embedded transparent electrode film with two-dimensional conductive material array

A technology of conductive materials and transparent electrodes, which is applied in the field of solar photovoltaics, can solve the problems of expensive and complicated dry etching equipment and processes, and difficulty in ensuring the control accuracy of wet etching processes, so as to reduce plasma resonance absorption losses and reduce Effect of reflection loss and enhancement of light absorption

Active Publication Date: 2017-11-17
SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the realization of this battery structure requires dry and wet etching of the TCO film, and the dry etching equipment and process are relatively expensive and complicated, and the control accuracy of the wet etching process is difficult to guarantee.

Method used

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  • Solar cell of embedded transparent electrode film with two-dimensional conductive material array
  • Solar cell of embedded transparent electrode film with two-dimensional conductive material array
  • Solar cell of embedded transparent electrode film with two-dimensional conductive material array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] like figure 1 As shown, this embodiment provides a heterogeneous crystalline silicon solar cell with a two-dimensional conductive material array embedded transparent electrode film, the front and back of the heterogeneous crystalline silicon solar cell are covered with a two-dimensional conductive material array embedded The transparent electrode film, the two-dimensional conductive material array embedded transparent electrode film consists of a first layer patterned two-dimensional conductive material array placed on the p-type doped layer or n-type doped layer of the heterogeneous crystalline silicon solar cell and A second layer of transparent protective film covering the patterned two-dimensional conductive material array, the patterned two-dimensional conductive material array includes one or a combination of intersecting line arrays and spatially independent point arrays . In this embodiment, the patterned two-dimensional conductive material array is an intersec...

Embodiment 2

[0051] like Figure 5 As shown, this embodiment provides a heterogeneous crystalline silicon solar cell with a two-dimensional conductive material array embedded transparent electrode film, and its basic structure is as in embodiment 1, wherein the difference from embodiment 1 lies in: The patterned two-dimensional conductive material array is a spatially independent point array. In the spatially independent point array, the cross-section of the point includes one or more combinations of circular, rectangular, trapezoidal and triangular. The basic unit of the projected pattern formed by connecting the nearest points with a line includes one or a combination of two or more of triangles, parallelograms and hexagons. Specifically, such as Figure 4 As shown, in the spatially independent point array, the cross-section of the point is circular. The basic unit of the projection pattern formed by connecting the points with the closest distance is a parallelogram.

Embodiment 3

[0053] like Image 6 As shown, this embodiment provides a heterogeneous crystalline silicon solar cell with a two-dimensional conductive material array embedded transparent electrode film, and its basic structure is as in embodiment 1, wherein the difference from embodiment 1 lies in: The patterned two-dimensional conductive material array is a combination of intersecting line arrays and spatially independent point arrays. The two-dimensional conductive material array includes a combination of intersecting line arrays and spatially independent point arrays. The intersecting line array is a two-dimensional conductive line array arranged orthogonally, and the basic unit of the projection pattern formed by it is a rectangle (or square), and the center of each rectangle is distributed with spatially independent points to form a point array, such as Image 6 shown. As an example, the material type of the patterned two-dimensional conductive material array includes one of gold, sil...

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Abstract

The present invention provides a crystalline silicon heterojunction solar cell of embedded transparent electrode film with a two-dimensional conductive material array. The embedded transparent electrode film with two-dimensional conductive material array is formed by a first layer of a patterning two-dimensional conductive material array arranged on a p type and / or n type doped si-based film and a second layer of transparent protective film covered on a patterning two-dimensional conductive material array. The transparent electrode light transmittence approaches to that of a traditional indium-based oxide transparent conductive film, and the resistivity is lower than that of the traditional indium-based oxide transparent conductive film. The transparent electrode film can greatly match a Smart Wire interconnection technology so as to reduce the dosage of precious metals Ag and effectively reduce the cost of the crystalline silicon heterojunction solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar photovoltaics, in particular to a heterogeneous crystal silicon solar cell with a two-dimensional conductive material array embedded transparent electrode film. Background technique [0002] HIT (Hetero-junction with Intrinsic Thin-layer) cell is a high-efficiency heterojunction silicon-based solar cell first introduced by Sanyo Corporation of Japan. The main feature of the cell is the high-quality passivation of the surface of a single crystal silicon wafer by using an intrinsic silicon-based thin film. At the same time, doped and intrinsic silicon-based thin films form heterojunctions with single crystal silicon to obtain open circuit voltages as high as 750mV, 39.5mA / cm 2 Short-circuit current and photoelectric conversion efficiency above 24% (Proceedings of the 28thEUPVSEC, 2013, 748-751). The fabrication process is roughly as follows: Intrinsic and p-type silicon-based thin film layers are se...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/075
CPCH01L31/022433H01L31/022491H01L31/075Y02E10/548
Inventor 陈小源邓昌凯鲁林峰李东栋方小红王亮兴刘东方杨立友
Owner SHANGHAI ADVANCED RES INST CHINESE ACADEMY OF SCI