Semiconductor structure and method of forming same

Abstract

The invention provides a semiconductor structure and a method of forming the same. The method of forming includes the steps of forming a base, the base including a device region and an isolation region, the base comprising a substrate, fin portions located on a device region substrate and an initial isolation structure located on the device region substrate, the initial isolation structure covering sidewalls of the fin portions, and an isolation region substrate being provided with an initial groove thereon; forming a first coating layer on the surface of the sidewall of the initial groove, and forming an isolation groove on the isolation region substrate; forming an isolation layer filled in the isolation groove; and etching the initial isolation structure to expose the partial sidewalls and the top surfaces of the fin portions to form an isolation structure. The first coating layer is capable of reducing the contact between an oxidizing gas in a reactant forming the isolation layer with the adjacent sidewalls of the fin portions to the isolation layer so as to limit the oxidation of the fin portions adjacent to the isolation layer, the width inconsistency of the fin portions is further reduced, and the performance of semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. Transistors, as the most basic semiconductor devices, are currently being widely used. Therefore, as the component density and integration of semiconductor devices increase, the size of transistors is also getting smaller and smaller. [0003] A Fin Field Effect Transistor (FinFET) has intersecting fins like fish fins, which can improve the integration of semiconductor devices. Moreover, the gate structure of the fin field effect transistor can control the channel of the transistor from both sides of the fin, thereby increasing the control of the carriers in the channel of the transistor, which is beneficial to re...

AI Technical Summary

Problems solved by technology

The width of the fin in FinFET is very small, and a small change in the width of the fin can easily affect the performance of FinFET

[0005] However, in the semiconductor structure formed by the prior art, the fin widths of different FinFETs are inconsistent, resulting in inconsistent performance of different FinFETs

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