A light-emitting diode chip and its manufacturing method
A light-emitting diode and chip technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as easy overheating, high-power LEDs that cannot adopt a horizontal structure, and chip burnout, and achieve the effect of improving light output efficiency
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Embodiment 1
[0055] This implementation first provides a method for manufacturing a light-emitting diode chip, which consists of at least three manufacturing processes, and the first process includes in turn:
[0056] Step 1.1, please refer to the attached figure 2 , on the first substrate 11, a layer 12 of the first conductivity type, a first active layer 13 designed to generate radiation, and a layer 14 of the second conductivity type are sequentially grown,
[0057] Step 1.2, please refer to the attached image 3 , making a plurality of recesses 15 on the surface of the layer 14 of the second conductivity type on the opposite side from the first active layer 13, the recesses 15 penetrate from the layer 14 of the second conductivity type to the layer 12 of the first conductivity type, The layer 12 of the first conductivity type is exposed, the opening diameter of the recess 15 is not less than 100 nm, and the depth of the recess 15 is not less than 1 μm;
[0058] Step 1.3, please refer ...
Embodiment 2
[0069] Please see Figure 13 , this implementation provides a light emitting diode structure,
[0070] having a semiconductor layer sequence with a first active layer 13 designed to generate radiation between a layer 12 of a first conductivity type and a layer 14 of a second conductivity type,
[0071] - the layer 12 of the first conductivity type is adjacent to the positive side of the semiconductor layer sequence, that is, the upward side is defined as the positive side in the drawing, and the downward side is the back side,
[0072] - the semiconductor layer sequence comprises at least one recess 15 which extends from the rear side of the semiconductor layer sequence opposite the front side through the first active layer 13 to the layer 12 of the first conductivity type,
[0073] - electrically connecting the layer 12 of the first conductivity type through the recess by means of a first electrical connection layer, wherein the first electrical connection layer 28 at least ...
Embodiment 3
[0080] Please see Figure 14 , this implementation provides a light emitting diode structure,
[0081] having a semiconductor layer sequence with a first active layer 13 designed to generate radiation between a layer 12 of a first conductivity type and a layer 14 of a second conductivity type,
[0082] - the layer 12 of the first conductivity type is adjacent to the positive side of the semiconductor layer sequence, that is, the upward direction in the definition figure is the positive side, and the downward direction is the back side,
[0083] - the semiconductor layer sequence comprises at least one recess 15 which extends from the rear side of the semiconductor layer sequence opposite the front side through the first active layer 13 to the layer 12 of the first conductivity type,
[0084] - electrically connecting the layer 12 of the first conductivity type through said recess 15 by means of a first electrical connection layer 28 , wherein the first electrical connection l...
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