Thin film transistor manufacturing method, tft array substrate and flexible display
A technology of thin film transistor and manufacturing method, applied in transistor, semiconductor/solid-state device manufacturing, semiconductor device and other directions, can solve problems such as cracking of gate insulating layer
Active Publication Date: 2021-03-26
SHENZHEN ROYOLE TECH CO LTD
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Problems solved by technology
[0003] Embodiments of the present invention provide a method for manufacturing a thin film transistor and an array substrate, which are used to solve the technical problem that the climbing structure with a height difference in the gate insulating layer is broken when it is stressed and affects other layer structures
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Embodiment Construction
[0017] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.
[0018] The invention provides a thin film transistor, a TFT array substrate and a flexible display screen, and the thin film transistor can be used in a liquid crystal display screen or an organic display screen. The flexible display screen involved in the embodiment of the present invention is used for but not limited to mobile phone, tablet computer, palmtop computer, personal digital assistant (Personal Digital Assistant, PDA) or e-reader, etc., which is not specifically limited in the embodiment of the present invention.
[0019] The invention provides a method for manufacturing a thin film transistor, the method comprising:
[0020] forming a gate on a flexible substrate;
[0021] Forming a gate insulating layer, an active layer and a planarization layer on the gate and ...
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A method for manufacturing a thin-film transistor, and a TFT array substrate. The TFT array substrate comprises a flexible substrate (10), a gate electrode (12) overlaid on the surface of the flexible substrate (10), a gate insulation layer (14) covering the gate electrode (12), an active layer (16) overlaid on the gate insulation layer (14), and a planarization layer (18) arranged on the surface of the flexible substrate (10) and located at two opposite sides of the gate insulation layer (14), a source electrode (19) and a drain electrode (20), wherein the planarization layer (18) is connected to the gate insulation layer (14), and the source electrode (19) and the drain electrode (20) are both formed on the active layer (16) and the planarization layer (18); and the source electrode (19) and the drain electrode (20) have an interval therebetween. Also provided is a flexible display screen.
Description
technical field [0001] The invention relates to the field of manufacturing thin film transistors, in particular to a method for manufacturing thin film transistors, a TFT array substrate and a flexible display screen. Background technique [0002] At present, thin-film transistor (Thin-film transistors, TFT) array substrates are widely used in different types of display devices, such as flexible display screens, LCD or OLED display screens. A high-quality gate insulating layer in a thin film transistor is the key to achieving important parameters such as good electrical stability and small leakage current of the TFT array substrate. Therefore, the gate insulating layer is usually made of inorganic materials, such as using SiNx or SiOx through Chemical vapor deposition forms. When the TFT array substrate is applied to a flexible display, as the flexible substrate bends, the TFT film layer structure on it will be subjected to tensile stress and compressive stress correspondin...
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IPC IPC(8): H01L21/336H01L27/12
CPCH01L27/1214H01L27/127H01L29/66742H01L29/786
Inventor 赵继刚袁泽余晓军魏鹏
Owner SHENZHEN ROYOLE TECH CO LTD