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MEMS microphone and preparation method therefor

A microphone and stress direction technology, applied in the field of MEMS microphones and their preparation, can solve the problems of low yield and substrate warpage, etc.

Active Publication Date: 2017-12-12
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on this, it is necessary to provide a MEMS microphone and its preparation method for the problems of substrate warpage and low yield

Method used

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  • MEMS microphone and preparation method therefor
  • MEMS microphone and preparation method therefor
  • MEMS microphone and preparation method therefor

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Embodiment Construction

[0032] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. The preferred embodiments of the invention are shown in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field of the present invention. The terms used in the specification of the present invention herein are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. The term "and / or" as used herein includes any and all combinations of one or mor...

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Abstract

The invention relates to an MEMS microphone, and the microphone comprises a substrate, a lower electrode layer, a sacrificial layer, a stress layer, and an upper electrode layer. The central part of the substrate is provided with a first opening, and the lower electrode layer stretches across the substrate. The sacrificial layer, the stress layer and the upper electrode layer are sequentially stacked on the lower electrode layer, and the sacrificial layer and the stress layer are respectively provided with a second opening. The thickness of the stress layer is matched with the warping degree of the substrate. According to the invention, the thickness of the stress layer can be changed according to the warping or deformation degree of the semiconductor substrate, and the thickness or stress of the stress layer is enabled to be matched with the warping degree of the substrate. Through the change of the thickness and stress of the stress layer, a force in a direction opposite to the deformation direction of the substrate is applied to the substrate, so as to alleviate or remove the deformation of the substrate. In addition, the invention also provides a preparation method for the MEMS microphone, and the method can be perfectly compatible with the manufacturing technology of a conventional MEMS microphone, facilitates the production, is low in cost, and is high in rate of finished products.

Description

Technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a MEMS microphone and a preparation method thereof. Background technique [0002] Micro-Electro-Mechanical System (MEMS) devices, including silicon-based microphones, are usually produced using integrated circuit manufacturing technology. Silicon-based microphones have broad application prospects in hearing aids and mobile communication equipment. MEMS microphone chips have been researched for more than 20 years. During this period, many types of microphone chips have been developed, including piezoresistive, piezoelectric, and capacitive, among which capacitive MEMS microphones are the most widely used. Capacitive MEMS microphones have the following advantages: small size, high sensitivity, good frequency characteristics, low noise, etc. [0003] In the manufacturing process of MEMS microphones, processes (such as film deposition, corrosion, etc.) are generally only per...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04R19/04H04R31/00
CPCH04R19/04H04R31/00H04R2400/11H04R2201/003H04R19/005H04R31/006B81B7/02B81B2201/0257B81C1/00158H04R7/06
Inventor 胡永刚
Owner CSMC TECH FAB2 CO LTD