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Mems microphone and preparation method thereof

A microphone and stress direction technology, applied in the field of MEMS microphone and its preparation, can solve the problems of substrate warpage and low yield

Active Publication Date: 2021-06-04
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on this, it is necessary to provide a MEMS microphone and its preparation method for the problems of substrate warpage and low yield

Method used

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  • Mems microphone and preparation method thereof
  • Mems microphone and preparation method thereof
  • Mems microphone and preparation method thereof

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Embodiment Construction

[0032] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of ...

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Abstract

The invention relates to a MEMS microphone, comprising a substrate, a lower electrode layer, a sacrificial layer, a stress layer and an upper electrode layer, a first opening is arranged in the middle of the substrate, and the lower electrode layer spans the substrate; the sacrificial layer, the stress layer, the upper electrode layer The electrode layer is laminated on the lower electrode layer in sequence, and a second opening is opened on the sacrificial layer and the stress layer; the thickness of the stress layer matches the warpage of the substrate. The above-mentioned MEMS microphone can change the thickness of the stress layer according to the degree of warpage or deformation of the semiconductor substrate, so that the thickness or stress of the stress layer can match the degree of warpage of the substrate. By changing the thickness and stress of the stress layer, the substrate can be applied with The force in the opposite direction of the substrate deformation to reduce or eliminate the deformation of the substrate. In addition, a method for preparing the MEMS microphone is also provided, which is perfectly compatible with the existing manufacturing process of the MEMS microphone, is convenient for production, has low cost and high yield.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a MEMS microphone and a preparation method thereof. Background technique [0002] Micro-Electro-Mechanical System (MEMS) devices, including silicon-based microphones, are typically produced using integrated circuit fabrication techniques. Silicon-based microphones have broad application prospects in hearing aids and mobile communication equipment. The research on MEMS microphone chips has been going on for more than 20 years. During this period, many types of microphone chips have been developed, including piezoresistive, piezoelectric and capacitive, among which capacitive MEMS microphones are the most widely used. Capacitive MEMS microphones have the following advantages: small size, high sensitivity, good frequency characteristics, low noise, etc. [0003] In the manufacturing process of MEMS microphones, processes (such as film deposition, corrosion, etc.) are...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04R19/04H04R31/00
CPCH04R19/04H04R31/00H04R2400/11H04R2201/003H04R19/005H04R31/006B81B7/02B81B2201/0257B81C1/00158H04R7/06
Inventor 胡永刚
Owner CSMC TECH FAB2 CO LTD