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Power module

A power module and power semiconductor technology, which is applied in the direction of output power conversion device, DC power input conversion to DC power output, irreversible AC power input conversion to DC power output, etc., which can solve the problem of temperature rise and difficult short-circuit current correspondence , Difficulty in selecting fuses, etc., to prevent a sharp rise in temperature and block short-circuit current

Active Publication Date: 2017-12-12
SHINDENGEN ELECTRIC MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in a circuit using a plurality of power modules 5-1, 5-2, it is difficult to respond to the short-circuit current of each power module 5-1, 5-2
[0012] (c) In the case of using a fuse, it takes a certain amount of time to cut off the current
Once a short-circuit fault occurs in the power modules 5-1 and 5-2, the temperature will rise sharply
Therefore, for the sake of safety, it is necessary to block the current as much as possible in an instant, and this will make the selection of the fuse difficult.

Method used

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Experimental program
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Embodiment 1

[0031] (Structure of the power module of the first embodiment)

[0032] figure 1 is a schematic circuit diagram showing a power module in Embodiment 1 of the present invention.

[0033] This power module 10 has a package 10 a that accommodates power semiconductor elements and the like. The package 10a is formed of high heat-resistant and high-insulation resin, ceramics, and the like. The package 10a is provided with a current input terminal 11, a current output terminal 12, a control terminal 13 for inputting a switching signal Si1, a control terminal 14 for inputting a control signal Si2, and a detection terminal 15 for outputting a current detection signal S15.

[0034] In the package 10a, there are accommodated: a power semiconductor element (such as MOSFET) 21 for switching, a switch (such as MOSFET) 22 for blocking current, and a current detection means (such as a resistor) as one of the detection means. )twenty three. The drain and source of MOSFET 21 , the drain an...

Embodiment 2

[0066] (Constitution of Embodiment 2)

[0067] Figure 4 is a schematic circuit diagram showing a power module in Embodiment 2 of the present invention. in addition Figure 4 In and show the first embodiment figure 1 Common elements are represented using common symbols.

[0068] The power module 10A in the second embodiment is different from the power module 10 in the first embodiment in that the detection terminal 15 is connected to the connection point of the MOSFET 21 and the MOSFET 22 . From the detection terminal 15 and the current output terminal 12 , the voltage across the circuit including the MOSFET 22 and the resistor 23 is obtained as the current detection signal S15 for detecting the operation state of the MOSFET 21 .

[0069] Other constitutions of the second embodiment are the same as those of the first embodiment.

[0070] (operation of embodiment two)

[0071] The operation of the power module 10A in this embodiment is the same as that of the power modul...

Embodiment 3

[0075] (Constitution of Embodiment 3)

[0076] Figure 5 is a schematic circuit diagram showing a power module in Embodiment 3 of the present invention. in addition Figure 5 In and show the first embodiment figure 1 Common elements are represented using common symbols.

[0077] In the power module 10B of the third embodiment, a temperature sensing element 24 such as a thermistor as a temperature detection means is provided to replace the resistor 23 of the power module 10 in the first embodiment. The detection terminal 15 of the module 10 is additionally provided with a detection terminal 16 .

[0078]Two detection terminals 15 , 16 are provided in the package 10 a, and a temperature sensing element 24 is provided between the two detection terminals 15 , 16 . The temperature sensing element 24 is arranged near the MOSFET 21 , and it detects the temperature generated during the operation of the MOSFET 21 and outputs a temperature detection signal S24 to the detection ter...

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Abstract

To eliminate a rapid temperature increase by instantly interrupting a short-circuiting current when a short-circuit failure occurred in a power semiconductor element in a power module. A power module 10 has a package 10a. In the package 10a, the power module has: a MOSFET 21, i.e., a power semiconductor element; a resistor 23 as a detection means, which detects the operation state of the MOSFET 21, and outputs detection signals; and a MOSFET 22, i.e., a current interrupting switch connected in series to the MOSFET 21. In response to control signals Si2 generated on the basis of the detection signals, the MOSFET 22 becomes in a conductive state when the MOSFET 21 is normally operating, and when a short-circuit failure occurred in the MOSFET 21, the MOSFET 22 becomes in an interrupting state, and interrupts a current flowing in the MOSFET 21.

Description

technical field [0001] The present invention relates to a power module incorporating power semiconductor elements used in power supply circuits and the like. Background technique [0002] Conventionally, in power supply circuits such as inverters, power semiconductor elements such as power MOSFETs, bipolar transistors, and IGBTs (gate insulated bipolar transistors) have generally been used as switching elements. Generally, these power semiconductor elements are housed in a single element or a plurality of elements in a package, and packaged as a power module including a heat sink or the like. Patent Documents 1 and 2 describe conventional examples of power modules. [0003] Figure 8 It is a circuit diagram showing an example of a power supply circuit including a conventional power module. [0004] The power supply circuit converts the AC voltage provided by the primary side on the left side of the transformer 4 into a DC voltage through the two power modules 5-1 and 5-2 o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/58H02M7/12
CPCH02H3/05H02H3/08H02H3/085H02H7/222H02M1/08H02M1/32H02M3/33592H03K17/0822H03K17/102H03K2017/0806H03K2217/0027H02M1/0009H02M1/327Y02B70/10H03K17/08104H03K17/687
Inventor 铃木健一
Owner SHINDENGEN ELECTRIC MFG CO LTD