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Small square silicon core high-precision cutting process

A cutting process, high-precision technology, applied in the direction of fine working devices, manufacturing tools, stone processing equipment, etc., can solve the problems of diamond wire deviation, affecting product quality and yield, and inconvenient adjustment of verticality, so as to prevent Deviation, effect of guaranteeing product quality and yield

Active Publication Date: 2019-11-19
JIANGYIN DONGSHENG NEW ENERGY
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  • Claims
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Problems solved by technology

[0005] At present, the masterbatch of silicon core cutting is directly made of silicon rods produced in the reduction furnace. When cutting silicon cores, the silicon rods need to be hung on the cutting machine. It is very inconvenient to adjust the verticality of the silicon rods during cutting. Rods deviate, which affects the final product quality and yield

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  • Small square silicon core high-precision cutting process

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Embodiment Construction

[0023] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0024] A high-precision cutting process for small square silicon cores in this embodiment includes the following process steps:

[0025] Step 1, see figure 1 , take a cylindrical silicon rod, the silicon rod includes upper and lower sections, the upper section is a polysilicon section, the lower section is a monocrystalline silicon section, and four ridges are evenly arranged on the peripheral wall of the monocrystalline silicon section along its length direction;

[0026] Step two, see figure 1 , four guiding resin strips are glued on the end face of the monocrystalline silicon section of the silicon rod with glue, and the guiding resin strips are vertically arranged with the end surface of the monocrystalline silicon section. Corresponding to the positions of the four ridges on the peripheral wall of the monocrystalline silicon segment;

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Abstract

The invention relates to a small-square-silicon-core high-accuracy cutting technology. The small-square-silicon-core high-accuracy cutting technology includes the following steps that 1, a cylindricalsilicon bar is taken; 2, four guiding resin strips are pasted on the end face of a single crystal silicon section of the silicon bar through glue, and the guiding resin strips are connected from headto tail to form a square; 3, a crystal cup is pasted on the end face of a polycrystalline silicon section of the silicon bar through glue; 4, the silicon bar is hung to a multi-wire cutting machine through the crystal cup; 5, the angle position of the silicon is adjusted, and the guiding resin strips on the end face of the single crystal silicon of the silicon bar are mutually perpendicular to adiamond net for cutting the guiding resin strips; 6, a square line net of the multi-wire cutting machine continues to move upwards, and therefore cutting of the whole silicon bar is completed. By means of the small-square-silicon-core high-accuracy cutting technology, the cutting perpendicularity of the silicon bar can be adjusted and positioned, deviation between the diamond line and the siliconbar is generated during cutting is prevented accordingly, and the final production quality and the yield are effectively guaranteed.

Description

technical field [0001] The invention relates to a high-precision cutting process for small square silicon cores, belonging to the technical field of polysilicon production. Background technique [0002] At present, most of the current domestic polysilicon production processes are the conventional trichlorosilane hydrogen reduction method, that is, the improved Siemens method, the improved Siemens method or other similar methods. The main equipment for producing large-diameter polysilicon is the polysilicon reduction furnace. The long silicon core is powered on to heat the silicon core until the surface temperature reaches 1100 degrees Celsius, and high-purity trichlorosilane and hydrogen are introduced to make hydrogen reduction reaction occur at high temperature to make trichlorosilane The silicon molecules in the silicon pile up on the silicon core, making its diameter continuously increase. Usually, the diameter of the silicon core is 7-10 mm, which can be round or square...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/04
Inventor 袁郑堂薛荣国陈春雷
Owner JIANGYIN DONGSHENG NEW ENERGY