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Using modeling to determine wafer bias associated with a plasma system

A model, chip technology, applied in measuring devices, discharge tubes, instruments, etc., can solve the problems of voltage monitoring and control operations that cannot provide satisfactory results, expensive voltage, and time-consuming

Active Publication Date: 2018-01-12
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the implementation of operations using voltage monitoring and control may not provide satisfactory results
Furthermore, monitoring of voltage can be an expensive and time-consuming operation

Method used

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  • Using modeling to determine wafer bias associated with a plasma system
  • Using modeling to determine wafer bias associated with a plasma system
  • Using modeling to determine wafer bias associated with a plasma system

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Embodiment Construction

[0071] The following embodiments describe systems and methods for determining wafer bias associated with a plasma system using a model. It will be apparent that the embodiments may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail so as not to unnecessarily obscure the embodiments.

[0072] figure 1 is used to determine the location of the output of the impedance matching model 104, the location of the output of the section 173 of the RF transmission model 161 (e.g., model node N1m), and the output of the electrostatic chuck (ESC) model 125 (e.g., model A block diagram of an embodiment of the system 126 of variables of node N6m) position, the RF transmission model 161 is a model of the RF transmission line 113. Examples of variables include complex voltage, complex current, complex voltage and current, complex power, wafer bias, and the like. The RF transmission line 113 has an out...

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Abstract

The invention relates to using modeling to determine wafer bias associated with a plasma system. Systems and methods for determining wafer bias are described. One of the methods includes detecting output of a generator to identify a generator output complex voltage and current (V&I). The generator is coupled to an impedance matching circuit and the impedance matching circuit is coupled to an electrostatic chuck (ESC). The method further includes determining from the generator output complex V&I a projected complex V&I at a point along a path between an output of a model of the impedance matching circuit and a model of the ESC. The operation of determining of the projected complex V&I is performed using a model for at least part of the path. The method includes applying the projected complex V&I as an input to a function to map the projected complex V&I to a wafer bias value at the ESC model.

Description

[0001] This application is a divisional application of an invention patent application with the application number 201410042674.8, the filing date is January 29, 2014, and the title of the invention is "Determining the wafer bias associated with the plasma system using a model". technical field [0002] The present invention relates to using a model to determine wafer bias associated with a plasma system. Background technique [0003] In plasma-based systems, a plasma is generated within a plasma chamber to perform various operations on a wafer, such as etching, cleaning, deposition, and the like. The plasma is monitored and controlled to control the execution of various operations. For example, the plasma is monitored by monitoring the voltage of the plasma and controlled by controlling the amount of radio frequency (RF) power supplied to the plasma chamber. [0004] However, the use of voltage monitoring and execution of control operations may not provide satisfactory res...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32697H01J37/32706H01J37/32174H01J37/32926H01J37/32183G01R19/0061H01J2237/327
Inventor 约翰·C·小瓦尔考布拉德福德·J·林达克
Owner LAM RES CORP