Image distortion correction method of scanning electron microscope

Abstract

The present invention discloses an image distortion correction method of a scanning electron microscope and belongs to the computer vision field. The method comprises the following steps that: S1, images are acquired continuously on a preset time sequence, and a relationship Dd (t) between time shift distortion Dd and image acquisition time t is established; S2, drift distortion is removed in advance according to Dd (t) obtained in the S1, and a standard target is photographed, so that sparse image pixel position information and a corresponding distortion vector sample set are obtained; S3, arelation between the pixel coordinates u of any one pixel in an image plane and an inherent distortion vector l corresponding to the pixel is established, so that the inherent distortion model Df of imaging is obtained through calculation; and S4, the distortion model matrix Df is solved by using the sparse position information and the corresponding distortion vector sample set which are obtainedin the S2, and Df (u) and Dd (t) are used in combination to perform distortion correction on the images. According to the method of the invention, distortion modeling and correction are performed on two main distortion fields of the images of the scanning electron microscope. The method can be applied to practical engineering.

Description

technical field [0001] The invention belongs to the field of computer vision, and in particular relates to an image distortion correction method for a scanning electron microscope (SEM). Background technique [0002] With the continuous development of micro-nano technology, micro-nano devices have been more and more widely used in high-tech fields such as chip manufacturing, electronic packaging, and biomedicine. Micro-nano devices are usually composed of a variety of different nano-materials. The elastic modulus and thermal expansion coefficient of the materials are different. Under different loads, humidity and temperature conditions, cracks are prone to occur at the material junctions and cause micro-nano devices to fail. Therefore, the deformation analysis of materials and structures at the micro-nano scale is of great significance. [0003] Scanning electron microscopy (SEM) has its recognized advantages in image acquisition and acquisition, such as: a large depth of f...

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Problems solved by technology

[0008] In summary, there are still many barriers in the practical application of existing scanning electron microscope (SEM) image distortion correction methods.

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