Metal film etchant composition and method for manufacturing array substrate for display device
A metal film and composition technology, applied in the preparation of detergent mixture composition, detergent composition, chemical equipment and methods, etc., can solve the problems of increased variation and reduced etching performance, and achieve extremely simplified procedures and The effect of maximizing yield
Active Publication Date: 2020-01-24
DONGWOO FINE CHEM CO LTD
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Problems solved by technology
[0009] Korean Laid-Open Patent Publication No. 10-2007-0055259 proposes an etching solution and an etching method thereof that can etch a copper-molybdenum alloy film, but it cannot solve the problem that the etching (Etch) performance decreases as the number of sheets processed increases, and the side etching ( Side etch), the time required for the end of etching (End Point Detection; EPD), and the change in taper angle (Taper angle) increase
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[0083] Etching characteristic confirmation experiment
[0084] The etching process was carried out using the metal film etchant compositions of Examples 1 to 12 and Comparative Examples 1 to 9, respectively. The temperature of the metal film etchant composition was set at about 32° C. during the etching process using a jet etching experimental device (model name: ETCHER (TFT), SEMES). Although the etching time may vary depending on the etching temperature, it is usually performed in about 50 to 80 seconds in the LCD etching process. The profile cross section of the copper-based metal film etched in the above etching step was examined by SEM (Hitachi Corporation, model name S-4700), and the results are shown in Table 2 below. For the copper-based metal film used in the etching process, Cu / Mo-Ti 6500 / thin film substrates.
[0085] The amount of change in undercut (μm) with the change in Cu concentration was measured. The taper angle refers to the slope of the slope of the...
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Abstract
The present invention provides a metal film etchant composition and a method for manufacturing an array substrate for a display device, wherein the metal film etchant composition comprises A) hydrogen peroxide (H 2 O 2 ), B) fluorine-containing compound, C) alkyl tetrazole-based compound, D) imidazole-based compound, E) water-soluble compound with nitrogen atom and carboxyl group in one molecule, F) sulfate, and G) polyol-type surface The activator has the effect of minimizing changes in the time required for the end of etching (End Point Detection; EPD), side etch (Side etch), and taper angle (Taper angle), which vary with an increase in the number of processed sheets.
Description
technical field [0001] The invention relates to a metal film etchant composition and a method for manufacturing an array substrate for a display device using the metal film etchant composition. Background technique [0002] In semiconductor devices, the process of forming metal wiring on a substrate generally includes steps using the following processes: a metal film formation process using sputtering or the like; photoresist coating, exposure, and development using light in selective regions; A resist forming process; and an etching process, and includes cleaning processes before and after individual unit processes, and the like. Such an etching process refers to a process of leaving a metal film in a selective region using a photoresist as a mask, and generally, dry etching using plasma or the like or wet etching using a metal film etchant composition is used. . [0003] Generally speaking, a liquid crystal display device includes a liquid crystal panel formed by a thin ...
Claims
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IPC IPC(8): C23F1/18C23F1/26H01L27/12
CPCC23F1/44C23F1/18C23F1/34G02F1/136227H01B1/026C11D3/046C11D11/0047
Inventor 梁圭亨金童基金兑勇
Owner DONGWOO FINE CHEM CO LTD