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Cooling film and preparation method thereof

A heat-dissipating film, graphene film technology, applied in semiconductor/solid-state device manufacturing, telephone structure, electrical components, etc., can solve problems such as unreasonable heat dissipation, excessive software, reduced comfort, etc., to achieve fast and effective transmission and divergence , the effect of fast conduction

Pending Publication Date: 2018-01-26
全普半导体科技(深圳)有限公司
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Problems solved by technology

[0004] Generally speaking, the normal temperature of the mobile phone is 30-50 degrees. If it exceeds 50 degrees, not only the comfort of holding will be reduced, but also the performance of the mobile phone will be affected.
There are three main reasons for the overheating of mobile phones: excessive resistance of components; insufficient heat conduction and unreasonable heat dissipation, which cause heat to accumulate inside the mobile phone and overheat a certain part; excessive running software for a long time increases power
[0005] Existing heat dissipation methods for mobile phones include: metal backplane heat conduction, graphite heat sink heat conduction, heat conduction gel heat dissipation, heat pipe heat dissipation, etc. However, these methods are passive heat dissipation, and the heat dissipation effect is average.

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  • Cooling film and preparation method thereof
  • Cooling film and preparation method thereof

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Embodiment Construction

[0035] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0036] A heat dissipation film of the present invention comprises: a graphene film, a first nano-metal layer at the bottom of the graphene film, and a second nano-metal layer at the bottom of the first nano-metal layer. Moreover, the ratio of air gaps in the first nanometer metal layer is greater than the ratio of air gaps in the second nanometer metal layer.

[0037] The following is attached Figure 1-9 The present invention will be described in further detail with specific examples. It should be noted that the drawings are all in a very simplified form, using ...

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Abstract

The invention provides a cooling film and a preparation method thereof. According to the cooling film of adopting a graphene film, a first nano metal layer and a second nano metal layer, fast coolingis achieved by adopting the graphene film, short diffusion and fast transmission within the first nano metal layer are achieved by adopting a relatively high air gap ratio of the first nano metal layer, and heat can evenly enter the second nano metal layer; and the second nano metal layer has a relatively low air gap ratio, so that fast conduction of the heat is achieved, and the heat is quickly and effectively transmitted and dissipated from the graphene film.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a heat dissipation film and a preparation method thereof. Background technique [0002] With the development of smart phones, the main frequency of the chip is getting higher and higher, and the power is getting higher and higher, which will generate a lot of heat. If the heat cannot be dissipated in time, the frequency will be reduced, and the heat source will feel strong. The heating of the mobile phone not only affects the comfort, but also affects the performance of the mobile phone. Excessive heating of the phone can also burn out the hardware, and it is more likely to cause a fire while charging. [0003] When the mobile phone is running, the battery output current will generate heat when it passes through various components, so it is normal for the mobile phone to heat up. The heat generated by the machine running mainly passes through the back. It is abnormal that...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/373H01L21/48H04M1/02B82Y30/00
Inventor 汪际军
Owner 全普半导体科技(深圳)有限公司