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Switched capacitor circuit structure with method of controlling source-drain resistance across same

A circuit structure and capacitor technology, applied in the field of integrated circuits and silicon processes

Inactive Publication Date: 2018-01-26
MARVELL ASIA PTE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As IC technology continues to shrink in size, the ability to provide high performance oscillators with switched capacitors presents significant technical challenges

Method used

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  • Switched capacitor circuit structure with method of controlling source-drain resistance across same
  • Switched capacitor circuit structure with method of controlling source-drain resistance across same
  • Switched capacitor circuit structure with method of controlling source-drain resistance across same

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Embodiment Construction

[0071] In the following description reference is made to the accompanying drawings which form a part hereof, and in which are shown, by way of example, certain illustrative embodiments in which the teachings may be practiced. These specific embodiments are described in sufficient detail to enable those skilled in the art to practice the teaching, and it is to be understood that other specific embodiments may be utilized and changes may be made without departing from the scope of the teaching. Therefore, the following description is illustrative only.

[0072] Particular embodiments of the invention include switched capacitor circuit configurations, and methods of controlling at least the source-drain resistance of switching transistors in switched capacitor circuit configurations. The structure may include a switching transistor electrically coupled directly to the first capacitor and the second capacitor through its source and drain terminals. The gate terminal of the switch...

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Abstract

The invention relates to a switched capacitor circuit structure with a method of controlling source-drain resistance across same. Embodiments of the present disclosure provide a circuit structure including: a switching transistor including a gate terminal, a back-gate terminal, a source terminal, and a drain terminal; a biasing node coupled to the back-gate terminal of the switching transistor, the biasing node being alternately selectable between an on state and an off state; a first capacitor source-coupled to the switching transistor; a second capacitor drain-coupled to the switching capacitor; and a first enabling node source-coupled to the switching transistor, the first enabling node being alternately selectable between an on state and an off state.

Description

technical field [0001] Embodiments of the present invention relate generally to integrated circuits, silicon process technology, and more particularly to circuit structures for switched capacitors, and methods of controlling switched source-drain resistance in switched capacitors. Embodiments described herein may be used in various applications, such as oscillator circuits. Background technique [0002] In integrated circuit (IC) structures, transistors are a key component for implementing digital circuit designs. In general, a transistor includes three electrical terminals: source, drain and gate. By applying different voltages to the gate terminals, the flow of current between the source and drain terminals of the transistor can be switched on or off. The presence or absence of an applied voltage at the gate terminal of a transistor can be identified as the "on" and "off" states of the transistor. Thus, for example, by manipulating the voltage applied to the gate of eac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L27/105
CPCH03B5/1212H03B5/1228H03B5/1265H03B2200/004H03J5/00
Inventor 张弛A·巴拉苏布拉马尼扬
Owner MARVELL ASIA PTE LTD