Method for forming word lines with high aspect ratio in three-dimensional memory
A high-aspect-ratio memory technology, applied in semiconductor devices, electrical solid-state devices, electrical components, etc., can solve the problems of word line filling dissatisfaction, gaps, and affecting the yield rate of 3D memory, so as to ensure the yield rate and improve the process quality Effect
Active Publication Date: 2019-03-12
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
However, in the current three-dimensional memory manufacturing process, since the top critical dimension (TOP CD) of the channel via hole is difficult to make small, the distance between two channel via holes (Channel hole) adjacent to each other obliquely is too small, resulting in In the process of subsequent filling to form word lines, the word lines are sealed in advance, so that the filling of the word lines is not full or there are gaps, which affects the yield rate of the three-dimensional memory
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[0022] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.
[0023] Combining the background technology and the technical solution in the present invention, the top critical dimension of the channel via hole and the distance between two channel via holes adjacent to each other in an oblique direction are now described, as figure 1 and figure 2 As shown, among them, figure 1 There are multiple channel via holes in the extending direction of the dotted line in the middle, figure 2 for fig...
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The invention discloses a method for forming a word line with a high aspect ratio in a three-dimensional memory, which belongs to the technical field of semiconductors. The method includes: providing a main body structure with a high aspect ratio and voids to be filled; partially filling the voids to be filled with material; performing lateral etching back on the voids to be filled that have been partially filled with materials; The material is filled to no voids to form word lines. In the present invention, the word lines are formed by means of "partial filling-horizontal back-engraving-refilling", which effectively solves the problem that the word lines are sealed in advance or the word lines are not filled enough to produce gaps in the process of forming word lines with high aspect ratios, and improves the quality of the word lines. Process quality, thereby ensuring the yield rate of the three-dimensional memory.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a word line with a high aspect ratio in a three-dimensional memory. Background technique [0002] Flash memory is a non-volatile memory and a special structure of electrically erasable and programmable read-only memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve The purpose of storing data so that the data stored in the memory will not disappear due to power interruption. Flash memory has become a hotspot in the research of non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, no...
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IPC IPC(8): H01L27/11551H01L27/11526H01L27/11578H01L27/11573
CPCH10B41/40H10B41/20H10B43/20H10B43/40
Inventor 姚兰吕震宇陈俊胡禺石陶谦
Owner YANGTZE MEMORY TECH CO LTD