Glass containing fine crystal silver coating for adjusting gIR and manufacturing method thereof
A technology of silver coating and crystalline silver layer, applied in the direction of coating, etc., can solve the problems of low-emissivity glass that cannot be heat treated, the Ag layer is easily oxidized, and hinders the application.
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Embodiment 1
[0065] The fine-grained silver-containing coating adjusts the film layer structure of gIR glass embodiment 1 as follows: glass, NbO x , AZO, Nb, AgNi10, Nb, AZO, NbO X , AZO, AgSnO2, AgNi10, Nb, AZO, SiO x N y .
[0066] In this embodiment, the first base dielectric combination layer is NbO x layer with a thickness of 26 nm.
[0067] In this embodiment, the second base dielectric composite layer is an AZO layer with a thickness of 10 nm.
[0068] In this embodiment, the first barrier layer is a Nb layer with a thickness of 1 nm.
[0069] In this embodiment, the thickness of the first fine-grained silver layer is 11 nm.
[0070] In this embodiment, the second barrier layer is a Nb layer with a thickness of 1 nm.
[0071] In this embodiment, the first interlayer dielectric composite layer is an AZO layer with a thickness of 10 nm.
[0072] In this embodiment, the second interlayer dielectric combination layer is NbO x layer with a thickness of 55 nm.
[0073] In this e...
Embodiment 2
[0090] The fine-grained silver-containing coating adjusts the film layer structure of gIR glass embodiment 2 as follows: glass, NbO x , AZO, Nb, AgNi10, Nb, AZO, NbO X , AZO, AgSnO2, AgNi10, Nb, AZO, ZrOx.
[0091] In this embodiment, the first base dielectric combination layer is NbO x layer with a thickness of 21 nm.
[0092] In this embodiment, the second base dielectric combination layer is an AZO layer with a thickness of 15 nm.
[0093] In this embodiment, the first barrier layer is a Nb layer with a thickness of 1.5 nm.
[0094] In this embodiment, the thickness of the first fine-grained silver layer is 11 nm.
[0095] In this embodiment, the second barrier layer is a Nb layer with a thickness of 1.5 nm.
[0096] In this embodiment, the first interlayer dielectric composite layer is an AZO layer with a thickness of 15 nm.
[0097] In this embodiment, the second interlayer dielectric combination layer is NbO x layer with a thickness of 50 nm.
[0098] In this emb...
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