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Image sensor

A technology of image sensor and photosensitive structure, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of low photogenerated carrier generation efficiency and affect the performance of image sensors, etc., to increase the number of excited electron-hole pairs Possibility, performance improvement, and the effect of increasing the chance of absorption

Inactive Publication Date: 2018-02-09
HUAIAN IMAGING DEVICE MFGR CORP
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Problems solved by technology

[0004] However, in the image sensor in the prior art, even if a back-illuminated structure is introduced, the generation efficiency of photogenerated carriers is still not high, which affects the performance of the image sensor

Method used

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Embodiment Construction

[0025] It can be seen from the background art that the image sensor in the prior art suffers from low photogenerated carrier generation efficiency, which affects the performance of the image sensor.

[0026] With the improvement of device integration, the size of the photosensitive element is also reduced, and the area of ​​the photosensitive element irradiated by light is getting smaller and smaller, and the probability of photons being absorbed and exciting electron-hole pairs is reduced, resulting in photogenerated loads. The problem of too low generation efficiency of flow particles affects the performance of the image sensor.

[0027] In order to solve the above technical problem, the present invention provides an image sensor, through the arrangement of the reflective layer, to achieve the purpose of prolonging the optical path of light propagating in the photosensitive structure, thereby increasing the probability of photons being absorbed and increasing the number of ex...

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Abstract

Disclosed is an image sensor. The image sensor comprises a substrate, a light sensitive structure and a reflection layer, wherein the light sensitive structure is embedded in the substrate and exposedfrom the surface of the substrate; and the reflection layer is stacked on the surface, opposite to incidence of light ray, of the light sensitive structure. By virtue of setting of the reflection layer, the propagating light path of the light ray in the light sensitive structure can be prolonged, thereby improving photon absorption probability and improving possibility of exciting electron-hole pairs, and further improving the photon-generated carrier electricity generation efficiency, and improving the performance of the image sensor.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming an image sensor. Background technique [0002] Image sensors can be classified into charge-coupled devices (Charge-Coupled Device, CCD) and complementary metal oxide semiconductor devices (Complementary Metal Oxide Semiconductor, CMOS) according to the principles they adopt. Wherein the CMOS image sensor is manufactured by using the traditional CMOS circuit technology, so the image sensor can be integrated with the required peripheral circuits, so that the CMOS image sensor has a wider application prospect. [0003] In traditional image sensors, the photosensitive element is located behind the circuit element, and the light can only reach the photosensitive layer after passing through the circuit layer, and the light will be affected by the circuit element halfway. The back-illuminated image sensor is to reverse the direction of the photosensitive ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/1464H01L27/14629
Inventor 王连红黄晓橹
Owner HUAIAN IMAGING DEVICE MFGR CORP
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