Large full well capacity ccd with anti-halation structure

A technology with full well capacity and well area, applied in the field of CCD, can solve the problems of satellite ground imaging or spectral scanning, low image contrast and dynamic range, small full well capacity, etc., to improve contrast and dynamic range, quantum The effect of high efficiency and large full well capacity

Active Publication Date: 2020-08-14
THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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AI Technical Summary

Problems solved by technology

[0003] Although the performance of the visible light array CCD is excellent, the number of full-well electrons in the existing visible light array CCD is generally 100ke - ~500ke - Within the range, its full well capacity is small. If this visible light area array CCD is used for satellite ground imaging or spectral scanning, due to the large imaging area, the contrast and dynamic range of the image are low due to the limitation of the full well capacity of the device. ,, cannot meet the needs of satellite ground imaging or spectral scanning

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  • Large full well capacity ccd with anti-halation structure
  • Large full well capacity ccd with anti-halation structure
  • Large full well capacity ccd with anti-halation structure

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Embodiment Construction

[0018] A CCD with a large full well capacity and an anti-halation structure, the CCD is an area array CCD with a visible light frame transfer structure composed of multiple picture elements; its innovation lies in: a single picture element includes four transfer control gates, two potential barriers Region 1, two potential well regions 2 and two anti-halo gates 4; the peripheral profile of the potential barrier region 1 is rectangular, and the peripheral profile of the potential well region 2 is rectangular; the peripheral profile of the potential barrier region 1 The direction where the left side is located is marked as the A direction, and the direction perpendicular to the A direction is marked as the B direction; the potential barrier region 1 and the potential well region 2 are arranged along the B direction: the right side of the first potential barrier region 1 and the first potential well The left side of the region 2 is connected, the right side of the first potential ...

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Abstract

The invention discloses a large-full-well-capacity CCD with a corona resisting structure, and the CCD is an area array CCD which is composed of a plurality of pixels and is of a visible light frame transfer structure. The innovation of the CCD lies in that a single pixel comprises four transfer control gates, two barrier regions, two potential well regions, and two corona resisting gates. The beneficial effects of the invention are that the invention provides the large-full-well-capacity CCD with the corona resisting structure; the CCD is large in full well capacity; the quantum efficiency ofthe pixels is higher; the CCD is stronger in corona resisting capability; the CCD can effectively improve the image contrast and enlarge the dynamic range.

Description

technical field [0001] The invention relates to a CCD technology, in particular to a CCD with a large full well capacity and an anti-corona structure. Background technique [0002] The area array CCD with visible light frame transfer structure (hereinafter referred to as visible light area array CCD) is a high-sensitivity photoelectric sensor, which is widely used in spectral mapping, graphic scanning, fast scanning imaging, calibration measurement and other systems, and visible light The area array CCD has a wide spectral detection range, and has a good response to the spectral range from near ultraviolet to near infrared. [0003] Although the performance of the visible light array CCD is excellent, the number of full-well electrons in the existing visible light array CCD is generally 100ke - ~500ke - Within the range, its full well capacity is small. If this visible light area array CCD is used for satellite ground imaging or spectral scanning, due to the large imaging ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/148
CPCH01L27/14806
Inventor 王小东汪朝敏李博乐涂戈
Owner THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP
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