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Terahertz CMOS sensor

A technology of imaging sensors and metal layers, applied in the field of sensors, can solve problems such as interference signals, high intensity internal noise, etc.

Inactive Publication Date: 2018-02-23
NETEERA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] One problem with megahertz waves is that they penetrate many commonly used multiple materials (such as those used in CMOS technology), optionally interfering with any received signal
Also, the strength of a signal received by a megahertz antenna is not much greater than the internal noise of a standard CMOS transistor

Method used

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Examples

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Embodiment Construction

[0034] Figure 1A is a schematic diagram of a megahertz imaging sensor 100 according to an exemplary embodiment of the present invention. In an exemplary embodiment of the present invention, the imaging sensor 100 is formed as a chip using conventional bulk CMOS (bulk CMOS) or silicon on insulator (SOI) technology. Optionally, the imaging sensor 100 is formed as a chip 110 with an array 120 on top of the chip 110, for example by printing a plurality of antennas of metal (such as copper , gold, aluminum or other metal materials). In an exemplary embodiment of the present invention, the material of the chip 110 is used as a dielectric material, and the heights "h", "h1" and "h2" of the dielectric material and curable filling material 190 are The dimensions of the plurality of antennas 120 are selected such that they correspond to a particular range of wavelengths of the megahertz signals being measured to provide optimum gain for these wavelengths.

[0035] In an exemplary emb...

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Abstract

An imaging sensor for accepting terahertz signals, including a die made of a dielectric material, one or more antennas for receiving terahertz signals, positioned on top of the die or in an upper layer of the die, each antenna having a CMOS detector electrically coupled to the antenna and positioned in the die below the antenna, a metal shield layer in the die below the antennas and above the CMOSdetectors, shielding the CMOS detector from interference signals, a shielding layer under the die comprising a back metal coating and / or a layer of silver epoxy glue for attaching the bottom of the die to a lead frame.

Description

technical field [0001] The present invention relates to a sensor for acquiring images of electromagnetic signals in the megahertz range, more particularly wherein said sensor is realized in CMOS (Complementary Metal Oxide Semiconductor) technology. Background technique [0002] A multi-megahertz signal refers to a signal in the megahertz range and sub-megahertz range (eg, a plurality of signals having a frequency in the range of approximately 100 GHz to 3 THz) between the infrared range and the microwave range. Until recently, the megahertz range (including the sub-megahertz range) was widely ignored. Since few sources, applications and detectors are used to process such signals. In recent years, the megahertz range has begun to be explored, but the means for detecting electromagnetic signals of multiple megahertz usually use complex and expensive equipment, integrated with simple, low-cost CMOS (complementary metal oxide semiconductor) for other ranges The circuit is reve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L23/66
CPCH01L23/66H01L27/14601H01L27/14643H01L27/14683H01L27/14689H01L2223/6677G01J5/0837H01Q1/2283H01Q1/526H01Q9/28H01Q15/08H01Q19/062H01Q19/108H01Q21/062H01Q25/001G01J2005/202H01L2924/181H01L2224/32145H01L2224/32245H01L2224/48247H01L2224/48465H01L2224/73265G01J3/42G01J5/0225G01J5/0806H01L27/14623H01L27/14636H01L27/14649H01L2924/3025H01L2924/00012H01L2924/00H04N25/75
Inventor 海姆·戈尔伯格彼得·福尔德西奥马尔·埃谢特
Owner NETEERA TECH
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