Expansion magnetic tunnel junction, spinning majority gate device and logic circuit

Abstract

The invention discloses an expansion magnetic tunnel junction, a spinning majority gate device and a logic circuit. The spinning majority gate device comprises three input magnetic tunnel junctions (MTJs) and an output MTJ, wherein free layers of the three input MTJs are connected with a free layer of the output MTJ, magnetization directions of the free layers of the three input MTJs are determined by a direction and a size of an injection current, a magnetization direction of the free layer of the output MTJ is affected jointly by the magnetization directions of the free layers of the other three MTJs, and the resistance states of the output MTJs are determined jointly by the magnetization directions of the free layers of the output MTJs and magnetization of fixed layers. The magnetization directions of the fixed layers are changed by injecting a current, parallel to a membrane surface, into a heavy metal layer, so that the resistance states of the output MTJs are changed; and a freelayer of the previous spinning majority gate device and a free layer of a next spinning majority gate device are in bridge connection, a transfer current is injected into the output MTJs of the previous spinning majority gate device, and thus, information interconnection of the two spinning majority gate devices is achieved.

Description

technical field [0001] The invention belongs to the technical field of spin electronics and devices, and more specifically relates to a spin majority gate device and a logic circuit based on the STT effect. Background technique [0002] In 2007, the magnetic recording industry giant IBM and TDK jointly developed a new generation of MRAM, using a new technology called spin-transfer-torque (STT), using the enlarged tunnel effect (tunnel effect) , making the change of magnetoresistance about 1 times. Magnetic devices that use the STT effect to flip the magnetization state of the free layer can be integrated in many mainstream applications, especially mobile devices and storage devices. In this spin-spin majority gate device, the functions of computing and storage can be integrated on the same device, and the non-volatility of data in the magnetic system is the key to realizing the "integrated storage and processing" architecture . This architecture can overcome the bottlenec...

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Problems solved by technology

[0004] For the above defects or improvement needs of the prior art, the present invention provides an extended magnetic tunnel junction, a spin majority gate device and a logic circuit, the purpose of which is to solve the problem of the existing spin majority gate device based on the STT effect. The technical problem of being able to realize the AND gate and the OR gate makes it impossible to realize all logic functions

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