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Back-illuminated imaging sensor packaging structure and preparing method thereof

An image sensor and packaging structure technology, which is applied to electric solid state devices, semiconductor devices, radiation control devices, etc., can solve the problems of cumbersome and complicated process steps and high cost, and achieve the effects of shortening process time, saving costs, and saving process steps.

Pending Publication Date: 2018-02-27
SJ SEMICON JIANGYIN CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a back-illuminated image sensor packaging structure and its preparation method, which are used to solve the problem of using the through-silicon via technology to realize the electrical lead-out of the back-illuminated image sensor in the prior art. The existing process steps are cumbersome and complicated, and the cost is high

Method used

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  • Back-illuminated imaging sensor packaging structure and preparing method thereof
  • Back-illuminated imaging sensor packaging structure and preparing method thereof
  • Back-illuminated imaging sensor packaging structure and preparing method thereof

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Embodiment 1

[0064] see figure 1 , the present embodiment provides a method for preparing a package structure of a back-illuminated image sensor, the method for preparing a package structure of a back-illuminated image sensor includes the following steps:

[0065] 1) providing a supporting substrate;

[0066] 2) forming a back-illuminated image sensor on the surface of the supporting substrate;

[0067] 3) using a laser to form a laser through hole in the support substrate, the laser through hole penetrates the support substrate up and down, and exposes part of the back-illuminated image sensor;

[0068]4) forming a dielectric layer on the sidewall of the laser through hole and the surface of the support substrate away from the back-illuminated image sensor;

[0069] 5) forming a conductive plug in the laser through hole, the conductive plug filling the laser through hole and electrically connecting with the back-illuminated image sensor;

[0070] 6) forming a rewiring layer on the surf...

Embodiment 2

[0107] read on Figure 14, this embodiment also provides a back-illuminated image sensor packaging structure, the back-illuminated image sensor packaging structure can be prepared by using, but not limited to, the preparation method of the back-illuminated image sensor packaging structure described in Embodiment 1 , the back-illuminated image sensor packaging structure includes: a support substrate 10; a back-illuminated image sensor 11, the back-illuminated image sensor 11 is located on the support substrate 10; a laser through hole 12, the laser through The hole 12 is located in the support substrate 10, and penetrates the support substrate 10 up and down to expose part of the back-illuminated image sensor 11; a dielectric layer 13, the dielectric layer 13 is located in the laser through hole 12 The sidewall of the support substrate 10 and the surface away from the back-illuminated image sensor 11; the conductive plug 14, the conductive plug 14 is located in the laser throug...

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Abstract

The invention provides a back-illuminated imaging sensor packaging structure and a preparing method thereof. The back-illuminated imaging sensor packaging structure comprises a supporting substrate, aback-illuminated imaging sensor located on the supporting substrate, a laser through hole located in the supporting substrate and vertically penetrating through the supporting substrate, a dielectriclayer located on the side wall of the laser through hole and the surface, away from the back-illuminated imaging sensor, of the supporting substrate, a conducting plug located in the laser through hole and electrically connected with the back-illuminated imaging sensor, a rewiring layer located on the surface of the dielectric layer and electrically connected with the conducting plug and a welding flux bump located on the surface, away from the dielectric layer, of the rewiring layer and electrically connected with the rewiring layer. The laser through hole is formed in the supporting substrate and serves as an eduction through hole for electric eduction of the back-illuminated imaging sensor, the silicon through hole process is not involved, the process steps can be effectively reduced,the process time is greatly shortened, light resistance and mask usage is reduced, and cost is saved greatly.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to a back-illuminated image sensor packaging structure and a preparation method thereof. Background technique [0002] With the development of technology, back-illuminated image sensors (BSI CIS) are widely used in various fields. In the existing process, when the back-illuminated image sensor is packaged, the through-silicon via (TSV) process is generally used to form a connection via hole in the supporting substrate supporting the back-illuminated image sensor, and the connection via hole is filled with metal. forming a conductive plug; and then forming a rewiring layer and a solder bump on the surface of the support substrate away from the back-illuminated image sensor to realize the electrical extraction of the back-illuminated image sensor. However, the existing through-silicon via process design processes such as exposure, etching, and electroplating have prob...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14636H01L27/14638H01L27/14643H01L27/14683H01L27/14689
Inventor 陈彦亨林正忠吴政达
Owner SJ SEMICON JIANGYIN CORP
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